All MOSFET. WMB80P04TS Datasheet

 

WMB80P04TS MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMB80P04TS
   Marking Code: B80P04S
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 81.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 110 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 430 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: PDFN5060-8L

 WMB80P04TS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMB80P04TS Datasheet (PDF)

 ..1. Size:638K  way-on
 wmb80p04ts.pdf

WMB80P04TS WMB80P04TS

WMB80P04TS 40V P-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB80P04TS uses advanced power trench technology that has Gbeen especially tailored to minimize the on-state resistance and yet sssssGsmaintain superior switching performance.Features PDFN5060-8L V = -40V, I = -80A DS DR

 9.1. Size:618K  way-on
 wmb80n06ts.pdf

WMB80P04TS WMB80P04TS

WMB80N06TS 60V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB80N06TS uses advanced power trench technology that has Gbeen especially tailored to minimize the on-state resistance and yet sssssGsmaintain superior switching performance. Features PDFN5060-8L V = 60V, I = 80A DS DR

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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