All MOSFET. WMB80P04TS Datasheet

 

WMB80P04TS Datasheet and Replacement


   Type Designator: WMB80P04TS
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 81.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 430 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: PDFN5060-8L
 

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WMB80P04TS Datasheet (PDF)

 ..1. Size:638K  way-on
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WMB80P04TS

WMB80P04TS 40V P-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB80P04TS uses advanced power trench technology that has Gbeen especially tailored to minimize the on-state resistance and yet sssssGsmaintain superior switching performance.Features PDFN5060-8L V = -40V, I = -80A DS DR

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WMB80P04TS

WMB80N06TS 60V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB80N06TS uses advanced power trench technology that has Gbeen especially tailored to minimize the on-state resistance and yet sssssGsmaintain superior switching performance. Features PDFN5060-8L V = 60V, I = 80A DS DR

Datasheet: WMB56N04T1 , WMB58N03T1 , WMB60P02TS , WMB60P03TA , WMB690N15HG2 , WMB70N04T1 , WMB70P02TS , WMB80N06TS , AO3407 , WMB81N03T1 , WMB90N02TS , WMB90P03TS , WMB90P04TS , WMB95P06TS , WMC1N40D1 , WMF05N70MM , WMJ020N10HGS .

History: IPI120N08S4-03

Keywords - WMB80P04TS MOSFET datasheet

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