All MOSFET. WMB80P04TS Datasheet

 

WMB80P04TS Datasheet and Replacement


   Type Designator: WMB80P04TS
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 81.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 430 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: PDFN5060-8L
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WMB80P04TS Datasheet (PDF)

 ..1. Size:638K  way-on
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WMB80P04TS

WMB80P04TS 40V P-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB80P04TS uses advanced power trench technology that has Gbeen especially tailored to minimize the on-state resistance and yet sssssGsmaintain superior switching performance.Features PDFN5060-8L V = -40V, I = -80A DS DR

 9.1. Size:618K  way-on
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WMB80P04TS

WMB80N06TS 60V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB80N06TS uses advanced power trench technology that has Gbeen especially tailored to minimize the on-state resistance and yet sssssGsmaintain superior switching performance. Features PDFN5060-8L V = 60V, I = 80A DS DR

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: TK2P60D | IRFBG20

Keywords - WMB80P04TS MOSFET datasheet

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