WMB81N03T1 Specs and Replacement

Type Designator: WMB81N03T1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 59 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 81 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 277 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm

Package: PDFN5060-8L

WMB81N03T1 substitution

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WMB81N03T1 datasheet

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WMB81N03T1

WMB81N03T1 30V N-Channel Enhancement Mode Power MOSFET Description D D D D D D WMB81N03T1 uses advanced power trench technology that has D D been especially tailored to minimize the on-state resistance and yet G ss s maintain superior switching performance. ss G s Features PDFN5060-8L V = 30V, I = 81A DS D R ... See More ⇒

Detailed specifications: WMB58N03T1, WMB60P02TS, WMB60P03TA, WMB690N15HG2, WMB70N04T1, WMB70P02TS, WMB80N06TS, WMB80P04TS, 60N06, WMB90N02TS, WMB90P03TS, WMB90P04TS, WMB95P06TS, WMC1N40D1, WMF05N70MM, WMJ020N10HGS, WMJ023N08HGS

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.