All MOSFET. WMB81N03T1 Datasheet

 

WMB81N03T1 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMB81N03T1
   Marking Code: B81N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 59 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 81 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 20 nC
   trⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 277 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: PDFN5060-8L

 WMB81N03T1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMB81N03T1 Datasheet (PDF)

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 wmb81n03t1.pdf

WMB81N03T1 WMB81N03T1

WMB81N03T1 30V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDWMB81N03T1 uses advanced power trench technology that has D Dbeen especially tailored to minimize the on-state resistance and yet Gsssmaintain superior switching performance. ssGsFeatures PDFN5060-8L V = 30V, I = 81A DS DR

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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