All MOSFET. WMB95P06TS Datasheet

 

WMB95P06TS Datasheet and Replacement


   Type Designator: WMB95P06TS
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 86 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3.3 nS
   Cossⓘ - Output Capacitance: 637 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: PDFN5060-8L
 

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WMB95P06TS Datasheet (PDF)

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WMB95P06TS

WMB95P06TS 60V P-Channel Enhancement Mode Power MOSFET DescriptionD DDWMB95P06TS uses advanced power trench technology that has been DDDD Despecially tailored to minimize the on-state resistance and yet maintain Gsuperior switching performance. sssssGsFeatures PDFN5060-8L V = -60V, I = -86A DS DR

Datasheet: WMB70N04T1 , WMB70P02TS , WMB80N06TS , WMB80P04TS , WMB81N03T1 , WMB90N02TS , WMB90P03TS , WMB90P04TS , IRFZ44N , WMC1N40D1 , WMF05N70MM , WMJ020N10HGS , WMJ023N08HGS , WMJ028N10HGS , WMJ10N100D1 , WMJ11N150D1 , WMJ12N120D1 .

History: AP4435GM | RMW180N03 | 6N90AF | FDPF33N25TRDTU | IRFHM8326 | TK7A60W | IPD60R600P7S

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