All MOSFET. WMB95P06TS Datasheet

 

WMB95P06TS MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMB95P06TS
   Marking Code: B95P06S
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 86 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 58.4 nC
   trⓘ - Rise Time: 3.3 nS
   Cossⓘ - Output Capacitance: 637 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: PDFN5060-8L

 WMB95P06TS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMB95P06TS Datasheet (PDF)

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 wmb95p06ts.pdf

WMB95P06TS WMB95P06TS

WMB95P06TS 60V P-Channel Enhancement Mode Power MOSFET DescriptionD DDWMB95P06TS uses advanced power trench technology that has been DDDD Despecially tailored to minimize the on-state resistance and yet maintain Gsuperior switching performance. sssssGsFeatures PDFN5060-8L V = -60V, I = -86A DS DR

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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