WMB95P06TS Specs and Replacement

Type Designator: WMB95P06TS

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 86 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.3 nS

Cossⓘ - Output Capacitance: 637 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm

Package: PDFN5060-8L

WMB95P06TS substitution

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WMB95P06TS datasheet

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WMB95P06TS

WMB95P06TS 60V P-Channel Enhancement Mode Power MOSFET Description D D D WMB95P06TS uses advanced power trench technology that has been D D D D D especially tailored to minimize the on-state resistance and yet maintain G superior switching performance. ss s ss G s Features PDFN5060-8L V = -60V, I = -86A DS D R ... See More ⇒

Detailed specifications: WMB70N04T1, WMB70P02TS, WMB80N06TS, WMB80P04TS, WMB81N03T1, WMB90N02TS, WMB90P03TS, WMB90P04TS, IRFZ44N, WMC1N40D1, WMF05N70MM, WMJ020N10HGS, WMJ023N08HGS, WMJ028N10HGS, WMJ10N100D1, WMJ11N150D1, WMJ12N120D1

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.