WMC1N40D1 Specs and Replacement
Type Designator: WMC1N40D1
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.25 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4.5 nS
Cossⓘ - Output Capacitance: 9.5 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 11 Ohm
Package: SOT23
WMC1N40D1 substitution
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WMC1N40D1 datasheet
wmc1n40d1.pdf
WMC1N40D1 400V 1A 8.2 N-ch Power MOSFET Description SOT-23 WMOSTM D1 is Wayon s 1st generation VDMOS family that is dramatic reduction D in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very G S robust and RoHS compliant. Features Typ.R =8.2 @V =10V DS(on) GS 100% avalanche tested Pb-free H... See More ⇒
Detailed specifications: WMB70P02TS, WMB80N06TS, WMB80P04TS, WMB81N03T1, WMB90N02TS, WMB90P03TS, WMB90P04TS, WMB95P06TS, IRF3205, WMF05N70MM, WMJ020N10HGS, WMJ023N08HGS, WMJ028N10HGS, WMJ10N100D1, WMJ11N150D1, WMJ12N120D1, WMX12N120D1
Keywords - WMC1N40D1 MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: WMK043N10HGS | WMK037N10HGS
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