WMC1N40D1 MOSFET. Datasheet pdf. Equivalent
Type Designator: WMC1N40D1
Marking Code: 1N40
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.1 V
|Id|ⓘ - Maximum Drain Current: 0.25 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 4.1 nC
trⓘ - Rise Time: 4.5 nS
Cossⓘ - Output Capacitance: 9.5 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 11 Ohm
Package: SOT23
WMC1N40D1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMC1N40D1 Datasheet (PDF)
..1. Size:1055K way-on
wmc1n40d1.pdf
wmc1n40d1.pdf
WMC1N40D1400V 1A 8.2 N-ch Power MOSFETDescriptionSOT-23WMOSTM D1 is Wayons 1st generationVDMOS family that is dramatic reductionDin on-resistance and ultra-low gate chargefor applications requiring high powerdensity and high efficiency. And it is very GSrobust and RoHS compliant.Features Typ.R =8.2@V =10VDS(on) GS 100% avalanche tested Pb-freeH
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