WMC1N40D1 Datasheet and Replacement
Type Designator: WMC1N40D1
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.25 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 4.5 nS
Cossⓘ - Output Capacitance: 9.5 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 11 Ohm
Package: SOT23
WMC1N40D1 substitution
WMC1N40D1 Datasheet (PDF)
wmc1n40d1.pdf

WMC1N40D1400V 1A 8.2 N-ch Power MOSFETDescriptionSOT-23WMOSTM D1 is Wayons 1st generationVDMOS family that is dramatic reductionDin on-resistance and ultra-low gate chargefor applications requiring high powerdensity and high efficiency. And it is very GSrobust and RoHS compliant.Features Typ.R =8.2@V =10VDS(on) GS 100% avalanche tested Pb-freeH
Datasheet: WMB70P02TS , WMB80N06TS , WMB80P04TS , WMB81N03T1 , WMB90N02TS , WMB90P03TS , WMB90P04TS , WMB95P06TS , IRF3205 , WMF05N70MM , WMJ020N10HGS , WMJ023N08HGS , WMJ028N10HGS , WMJ10N100D1 , WMJ11N150D1 , WMJ12N120D1 , WMX12N120D1 .
History: STP45NE06
Keywords - WMC1N40D1 MOSFET datasheet
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History: STP45NE06



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