All MOSFET. WMJ11N150D1 Datasheet

 

WMJ11N150D1 Datasheet and Replacement


   Type Designator: WMJ11N150D1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 48 nS
   Cossⓘ - Output Capacitance: 190 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.2 Ohm
   Package: TO247
 

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WMJ11N150D1 Datasheet (PDF)

 ..1. Size:1748K  way-on
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WMJ11N150D1

WMJ11N150D11500V 11A 2.5 N-ch Power MOSFETDescriptionTO-247WMOSTM D1 is Wayons 1st generation VDMOSfamily that is dramatic reduction in on-resistanceand ultra-low gate charge for applications requiringhigh power density and high efficiency. And it isvery robust and RoHS compliant.GDSFeatures Typ.R =2.5@V =10VDS(on) GS 100% avalanche tested Pb-free

Datasheet: WMB90P04TS , WMB95P06TS , WMC1N40D1 , WMF05N70MM , WMJ020N10HGS , WMJ023N08HGS , WMJ028N10HGS , WMJ10N100D1 , 50N06 , WMJ12N120D1 , WMX12N120D1 , WMJ18N90D1 , WMJ20N50D1 , WMK20N50D1 , WML20N50D1 , WMJ220N20HG3 , WMJ27N80D1 .

History: HCU80R1K4 | HA9N90 | MSU5N60D | BRFL60R190C | 1HN04CH | IRHNA67160 | SMT12N60

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