WMJ11N150D1 Specs and Replacement

Type Designator: WMJ11N150D1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 48 nS

Cossⓘ - Output Capacitance: 190 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.2 Ohm

Package: TO247

WMJ11N150D1 substitution

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WMJ11N150D1 datasheet

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WMJ11N150D1

WMJ11N150D1 1500V 11A 2.5 N-ch Power MOSFET Description TO-247 WMOSTM D1 is Wayon s 1st generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. G D S Features Typ.R =2.5 @V =10V DS(on) GS 100% avalanche tested Pb-free... See More ⇒

Detailed specifications: WMB90P04TS, WMB95P06TS, WMC1N40D1, WMF05N70MM, WMJ020N10HGS, WMJ023N08HGS, WMJ028N10HGS, WMJ10N100D1, 50N06, WMJ12N120D1, WMX12N120D1, WMJ18N90D1, WMJ20N50D1, WMK20N50D1, WML20N50D1, WMJ220N20HG3, WMJ27N80D1

Keywords - WMJ11N150D1 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.