All MOSFET. WMJ11N150D1 Datasheet

 

WMJ11N150D1 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMJ11N150D1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 11 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 93 nC
   trⓘ - Rise Time: 48 nS
   Cossⓘ - Output Capacitance: 190 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.2 Ohm
   Package: TO247

 WMJ11N150D1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMJ11N150D1 Datasheet (PDF)

 ..1. Size:1748K  way-on
 wmj11n150d1.pdf

WMJ11N150D1 WMJ11N150D1

WMJ11N150D11500V 11A 2.5 N-ch Power MOSFETDescriptionTO-247WMOSTM D1 is Wayons 1st generation VDMOSfamily that is dramatic reduction in on-resistanceand ultra-low gate charge for applications requiringhigh power density and high efficiency. And it isvery robust and RoHS compliant.GDSFeatures Typ.R =2.5@V =10VDS(on) GS 100% avalanche tested Pb-free

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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