All MOSFET. WMX12N120D1 Datasheet

 

WMX12N120D1 Datasheet and Replacement


   Type Designator: WMX12N120D1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 90.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 58 nS
   Cossⓘ - Output Capacitance: 243 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO3PF
 

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WMX12N120D1 Datasheet (PDF)

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WMX12N120D1

WMJ12N120D1 WMX12N120D1 1200V 12A 1.25 N-ch Power MOSFET Description TO-247 TO-3PF TAB WMOSTM D1 is Wayons 1st generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. G D G D S S Features Typ.R =1.25@V

Datasheet: WMC1N40D1 , WMF05N70MM , WMJ020N10HGS , WMJ023N08HGS , WMJ028N10HGS , WMJ10N100D1 , WMJ11N150D1 , WMJ12N120D1 , IRFZ44 , WMJ18N90D1 , WMJ20N50D1 , WMK20N50D1 , WML20N50D1 , WMJ220N20HG3 , WMJ27N80D1 , WMJ3N120D1 , WMO3N120D1 .

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