WMX12N120D1 Datasheet and Replacement
Type Designator: WMX12N120D1
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 90.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 12 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 58 nS
Cossⓘ - Output Capacitance: 243 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO3PF
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WMX12N120D1 Datasheet (PDF)
wmj12n120d1 wmx12n120d1.pdf

WMJ12N120D1 WMX12N120D1 1200V 12A 1.25 N-ch Power MOSFET Description TO-247 TO-3PF TAB WMOSTM D1 is Wayons 1st generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. G D G D S S Features Typ.R =1.25@V
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: 8N65KL-TA3-T | VSE044C03MD | FRX130D2 | HGN650N15S | IPB80N08S2L-07 | FCD3400N80Z | WM02DN560Q
Keywords - WMX12N120D1 MOSFET datasheet
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History: 8N65KL-TA3-T | VSE044C03MD | FRX130D2 | HGN650N15S | IPB80N08S2L-07 | FCD3400N80Z | WM02DN560Q



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