WMX12N120D1 MOSFET Datasheet: N-Ch, 1200V, 12A. Full specification with pinout and replacement list

WMX12N120D1 Specs and Replacement

Type Designator: WMX12N120D1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 90.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 58 nS

Cossⓘ - Output Capacitance: 243 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: TO3PF

WMX12N120D1 substitution

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WMX12N120D1 datasheet

..1. Size:1375K way-on
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WMJ12N120D1 WMX12N120D1 1200V 12A 1.25 N-ch Power MOSFET Description TO-247 TO-3PF TAB WMOSTM D1 is Wayon s 1st generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. G D G D S S Features Typ.R =1.25 @V... See More ⇒

Detailed specifications: WMC1N40D1, WMF05N70MM, WMJ020N10HGS, WMJ023N08HGS, WMJ028N10HGS, WMJ10N100D1, WMJ11N150D1, WMJ12N120D1, IRFZ44, WMJ18N90D1, WMJ20N50D1, WMK20N50D1, WML20N50D1, WMJ220N20HG3, WMJ27N80D1, WMJ3N120D1, WMO3N120D1