All MOSFET. STK600 Datasheet

 

STK600 Datasheet and Replacement


   Type Designator: STK600
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 0.8 A
   Cossⓘ - Output Capacitance: 17 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
   Package: SOT89
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STK600 Datasheet (PDF)

 ..1. Size:98K  samhop
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STK600

GrerrPPrPrProSTK600aS mHop Microelectronics C orp.Ver 1.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) () MaxVDSS IDRugged and reliable.0.9 @ VGS=10VSuface Mount Package.60V 0.8A1.3 @ VGS=4.5VESD Protected.DDGSDSOT-89GS(TA=25C unless otherwise noted)

Datasheet: STM102D , FDP8870 , STM101N , FDP8870F085 , STK900 , FDP8874 , STK801 , FDP8876 , IRF9540N , FDP8880 , STK400 , FDP8896 , STK103 , FDP8N50NZ , FDPF10N50FT , FDPF10N50UT , FDPF10N60NZ .

History: AO4266 | IRLU9343PBF | 2SK3437 | BSZ0703LS | IRFL4315PBF | 15NM70L-TF34-T | VST012N06MS

Keywords - STK600 MOSFET datasheet

 STK600 cross reference
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