STK600 Datasheet and Replacement
Type Designator: STK600
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.8 A
Cossⓘ - Output Capacitance: 17 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
Package: SOT89
STK600 substitution
STK600 Datasheet (PDF)
stk600.pdf
GrerrPPrPrProSTK600aS mHop Microelectronics C orp.Ver 1.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) () MaxVDSS IDRugged and reliable.0.9 @ VGS=10VSuface Mount Package.60V 0.8A1.3 @ VGS=4.5VESD Protected.DDGSDSOT-89GS(TA=25C unless otherwise noted)
Datasheet: STM102D , FDP8870 , STM101N , FDP8870F085 , STK900 , FDP8874 , STK801 , FDP8876 , IRF2807 , FDP8880 , STK400 , FDP8896 , STK103 , FDP8N50NZ , FDPF10N50FT , FDPF10N50UT , FDPF10N60NZ .
Keywords - STK600 MOSFET datasheet
STK600 cross reference
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STK600 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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