STK600 Specs and Replacement
Type Designator: STK600
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.8 A
Electrical Characteristics
Cossⓘ - Output Capacitance: 17 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
Package: SOT89
STK600 substitution
- MOSFET ⓘ Cross-Reference Search
STK600 datasheet
stk600.pdf
Gre r r P Pr Pr Pro STK600 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) ( ) Max VDSS ID Rugged and reliable. 0.9 @ VGS=10V Suface Mount Package. 60V 0.8A 1.3 @ VGS=4.5V ESD Protected. D D G S D SOT-89 G S (TA=25 C unless otherwise noted) ... See More ⇒
Detailed specifications: STM102D, FDP8870, STM101N, FDP8870F085, STK900, FDP8874, STK801, FDP8876, IRF2807, FDP8880, STK400, FDP8896, STK103, FDP8N50NZ, FDPF10N50FT, FDPF10N50UT, FDPF10N60NZ
Keywords - STK600 MOSFET specs
STK600 cross reference
STK600 equivalent finder
STK600 pdf lookup
STK600 substitution
STK600 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: EN2305 | D4NK50Z-TO252 | APM3055LUC
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