All MOSFET. WMJ20N50D1 Datasheet

 

WMJ20N50D1 Datasheet and Replacement


   Type Designator: WMJ20N50D1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 278 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 285 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm
   Package: TO247
 

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WMJ20N50D1 Datasheet (PDF)

 ..1. Size:1271K  way-on
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WMJ20N50D1

WMJ20N50D1 WMK20N50D1 WML20N50D1500V 20A 0.22 N-ch Power MOSFETDescriptionTO-247 TO-220 TO-220FTABWMOSTM D1 is Wayons 1st generation VDMOSTABfamily that is dramatic reduction inon-resistance and ultra-low gate charge forapplications requiring high power density andhigh efficiency. And it is very robust and RoHScompliant.G GGD DDS SSFeatures V =550V@

Datasheet: WMJ020N10HGS , WMJ023N08HGS , WMJ028N10HGS , WMJ10N100D1 , WMJ11N150D1 , WMJ12N120D1 , WMX12N120D1 , WMJ18N90D1 , IRF1404 , WMK20N50D1 , WML20N50D1 , WMJ220N20HG3 , WMJ27N80D1 , WMJ3N120D1 , WMO3N120D1 , WMJ40N50D1 , WMPN40N50D1 .

History: SSF1010A | IRHN57250SE | TPS1120Y | MMBF0201NLT1G | IRFPS43N50KPBF | SMK0160D | NTB85N03

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