WMJ20N50D1 MOSFET. Datasheet pdf. Equivalent
Type Designator: WMJ20N50D1
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 278 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 20 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 52.5 nC
trⓘ - Rise Time: 27 nS
Cossⓘ - Output Capacitance: 285 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm
Package: TO247
WMJ20N50D1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMJ20N50D1 Datasheet (PDF)
..1. Size:1271K way-on
wmj20n50d1 wmk20n50d1 wml20n50d1.pdf
wmj20n50d1 wmk20n50d1 wml20n50d1.pdf
WMJ20N50D1 WMK20N50D1 WML20N50D1500V 20A 0.22 N-ch Power MOSFETDescriptionTO-247 TO-220 TO-220FTABWMOSTM D1 is Wayons 1st generation VDMOSTABfamily that is dramatic reduction inon-resistance and ultra-low gate charge forapplications requiring high power density andhigh efficiency. And it is very robust and RoHScompliant.G GGD DDS SSFeatures V =550V@
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