All MOSFET. WMJ220N20HG3 Datasheet

 

WMJ220N20HG3 Datasheet and Replacement


   Type Designator: WMJ220N20HG3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 329 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 82 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 210 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
   Package: TO247
 

 WMJ220N20HG3 substitution

   - MOSFET ⓘ Cross-Reference Search

 

WMJ220N20HG3 Datasheet (PDF)

 ..1. Size:601K  way-on
 wmj220n20hg3.pdf pdf_icon

WMJ220N20HG3

WMJ220N20HG3 200V N-Channel Enhancement Mode Power MOSFET DescriptionWMJ220N20HG3 uses Wayon's 3rd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This Sdevice is well suited for high efficiency fast switching applications. DG.TO-247Features V = 200V, I

 9.1. Size:671K  way-on
 wmn22n50c4 wmm22n50c4 wmj22n50c4 wmo22n50c4 wmk22n50c4 wml22n50c4.pdf pdf_icon

WMJ220N20HG3

WMN22N50C4, WMM22N MJ22N50CN50C4, WM C4 WMO22N50C4, WMK22N ML22N50CN50C4, WM C4 500V n Power MOSFETV 0.22 Super JunctionDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM C4

Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRF1405 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

History: STP16NF06L | STD16NF06LT4 | FDB9506L-F085 | SML30J130F | WST3401A | SUP70060E | 6N70A

Keywords - WMJ220N20HG3 MOSFET datasheet

 WMJ220N20HG3 cross reference
 WMJ220N20HG3 equivalent finder
 WMJ220N20HG3 lookup
 WMJ220N20HG3 substitution
 WMJ220N20HG3 replacement

 

 
Back to Top

 


 
.