WMJ220N20HG3 MOSFET. Datasheet pdf. Equivalent
Type Designator: WMJ220N20HG3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 329 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 82 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 36 nC
trⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 210 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
Package: TO247
WMJ220N20HG3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMJ220N20HG3 Datasheet (PDF)
wmj220n20hg3.pdf
WMJ220N20HG3 200V N-Channel Enhancement Mode Power MOSFET DescriptionWMJ220N20HG3 uses Wayon's 3rd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This Sdevice is well suited for high efficiency fast switching applications. DG.TO-247Features V = 200V, I
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WMN22N50C4, WMM22N MJ22N50CN50C4, WM C4 WMO22N50C4, WMK22N ML22N50CN50C4, WM C4 500V n Power MOSFETV 0.22 Super JunctionDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM C4
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