WMJ220N20HG3 MOSFET Datasheet: N-Ch, 200V, 82A. Full specification with pinout and replacement list

WMJ220N20HG3 Specs and Replacement

Type Designator: WMJ220N20HG3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 329 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 82 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 210 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm

Package: TO247

WMJ220N20HG3 substitution

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WMJ220N20HG3 datasheet

..1. Size:601K way-on
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WMJ220N20HG3 200V N-Channel Enhancement Mode Power MOSFET Description WMJ220N20HG3 uses Wayon's 3rd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This S device is well suited for high efficiency fast switching applications. D G . TO-247 Features V = 200V, I... See More ⇒

9.1. Size:671K way-on
wmn22n50c4 wmm22n50c4 wmj22n50c4 wmo22n50c4 wmk22n50c4 wml22n50c4.pdf pdf_icon

WMN22N50C4, WMM22N MJ22N50C N50C4, WM C4 WMO22N50C4, WMK22N ML22N50C N50C4, WM C4 500V n Power MOSFET V 0.22 Super Junction Descrip ption WMOSTM C4 is Wa 4th generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G and low ga charge performanc WMOSTM C4... See More ⇒

Detailed specifications: WMJ10N100D1, WMJ11N150D1, WMJ12N120D1, WMX12N120D1, WMJ18N90D1, WMJ20N50D1, WMK20N50D1, WML20N50D1, IRF640N, WMJ27N80D1, WMJ3N120D1, WMO3N120D1, WMJ40N50D1, WMPN40N50D1, WMJ4N150D1, WMX4N150D1, WMK4N150D1