All MOSFET. WMJ220N20HG3 Datasheet

 

WMJ220N20HG3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMJ220N20HG3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 329 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 82 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 36 nC
   trⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 210 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
   Package: TO247

 WMJ220N20HG3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMJ220N20HG3 Datasheet (PDF)

 ..1. Size:601K  way-on
wmj220n20hg3.pdf

WMJ220N20HG3
WMJ220N20HG3

WMJ220N20HG3 200V N-Channel Enhancement Mode Power MOSFET DescriptionWMJ220N20HG3 uses Wayon's 3rd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This Sdevice is well suited for high efficiency fast switching applications. DG.TO-247Features V = 200V, I

 9.1. Size:671K  way-on
wmn22n50c4 wmm22n50c4 wmj22n50c4 wmo22n50c4 wmk22n50c4 wml22n50c4.pdf

WMJ220N20HG3
WMJ220N20HG3

WMN22N50C4, WMM22N MJ22N50CN50C4, WM C4 WMO22N50C4, WMK22N ML22N50CN50C4, WM C4 500V n Power MOSFETV 0.22 Super JunctionDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM C4

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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