WMJ3N120D1 Specs and Replacement

Type Designator: WMJ3N120D1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 156.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 62.5 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 7.5 Ohm

Package: TO247

WMJ3N120D1 substitution

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WMJ3N120D1 datasheet

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WMJ3N120D1

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Detailed specifications: WMJ12N120D1, WMX12N120D1, WMJ18N90D1, WMJ20N50D1, WMK20N50D1, WML20N50D1, WMJ220N20HG3, WMJ27N80D1, AO3400, WMO3N120D1, WMJ40N50D1, WMPN40N50D1, WMJ4N150D1, WMX4N150D1, WMK4N150D1, WMJ60N60EM, WMJ69N30DMH

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.