WMJ3N120D1 MOSFET. Datasheet pdf. Equivalent
Type Designator: WMJ3N120D1
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 156.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 22.2 nC
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 62.5 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 7.5 Ohm
Package: TO247
WMJ3N120D1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMJ3N120D1 Datasheet (PDF)
wmj3n120d1 wmo3n120d1.pdf
WMJ3N120D1 WMO3N120D11200V 3A 6.3 N-ch Power MOSFETDescriptionTO-247TO-252WMOSTM D1 is Wayons 1st generationTABVDMOS family that is dramatic reductionTABin on-resistance and ultra-low gate chargefor applications requiring high powerdensity and high efficiency. And it is veryrobust and RoHS compliant.DGGDSSFeatures Typ.R =6.3@V =10VDS(on) GS
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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MOSFET: DAMIA1100N100 | DAMI660N60 | DAMI560N100 | DAMI500N60 | DAMI450N100 | DAMI360N150 | DAMI330N60 | DAMI320N100 | DAMI300N150 | DAMI280N200 | DAMI220N200 | DAMI220N150 | DAMI160N200 | DAMI160N100 | DAMH75N500H | DAMH560N100