All MOSFET. WMJ3N120D1 Datasheet

 

WMJ3N120D1 Datasheet and Replacement


   Type Designator: WMJ3N120D1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 156.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 62.5 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 7.5 Ohm
   Package: TO247
 

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WMJ3N120D1 Datasheet (PDF)

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WMJ3N120D1

WMJ3N120D1 WMO3N120D11200V 3A 6.3 N-ch Power MOSFETDescriptionTO-247TO-252WMOSTM D1 is Wayons 1st generationTABVDMOS family that is dramatic reductionTABin on-resistance and ultra-low gate chargefor applications requiring high powerdensity and high efficiency. And it is veryrobust and RoHS compliant.DGGDSSFeatures Typ.R =6.3@V =10VDS(on) GS

Datasheet: WMJ12N120D1 , WMX12N120D1 , WMJ18N90D1 , WMJ20N50D1 , WMK20N50D1 , WML20N50D1 , WMJ220N20HG3 , WMJ27N80D1 , IRF3710 , WMO3N120D1 , WMJ40N50D1 , WMPN40N50D1 , WMJ4N150D1 , WMX4N150D1 , WMK4N150D1 , WMJ60N60EM , WMJ69N30DMH .

History: HFC2N60U | 2N7002DW1T1 | BRFL65R380C | IRF7807V | SI9410DY | MMF80R900QZTH

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