All MOSFET. WMJ3N120D1 Datasheet

 

WMJ3N120D1 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMJ3N120D1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 156.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 22.2 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 62.5 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 7.5 Ohm
   Package: TO247

 WMJ3N120D1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMJ3N120D1 Datasheet (PDF)

 ..1. Size:1366K  way-on
 wmj3n120d1 wmo3n120d1.pdf

WMJ3N120D1 WMJ3N120D1

WMJ3N120D1 WMO3N120D11200V 3A 6.3 N-ch Power MOSFETDescriptionTO-247TO-252WMOSTM D1 is Wayons 1st generationTABVDMOS family that is dramatic reductionTABin on-resistance and ultra-low gate chargefor applications requiring high powerdensity and high efficiency. And it is veryrobust and RoHS compliant.DGGDSSFeatures Typ.R =6.3@V =10VDS(on) GS

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

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