All MOSFET. WMJ40N50D1 Datasheet

 

WMJ40N50D1 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMJ40N50D1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 416 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 40 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 165.3 nC
   trⓘ - Rise Time: 64 nS
   Cossⓘ - Output Capacitance: 700 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
   Package: TO247

 WMJ40N50D1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMJ40N50D1 Datasheet (PDF)

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 wmj40n50d1 wmpn40n50d1.pdf

WMJ40N50D1 WMJ40N50D1

WMJ40N50D1 WMPN40N50D1500V 40A 0.1 N-ch Power MOSFETDescriptionTO-247TO-3PNWMOSTM D1 is Wayons 1st generationTABTABVDMOS family that is dramatic reductionin on-resistance and ultra-low gate chargefor applications requiring high powerdensity and high efficiency. And it is veryrobust and RoHS compliant.GDGSDSFeatures Typ.R =0.1@V =10VDS(on) GS

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: NCE70T260 | DMP2069UFY4 | IXFR180N15P | IPD053N06N | IXTP50N20P

 

 
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