WMJ40N50D1 MOSFET. Datasheet pdf. Equivalent
Type Designator: WMJ40N50D1
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 416 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 40 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 165.3 nC
trⓘ - Rise Time: 64 nS
Cossⓘ - Output Capacitance: 700 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
Package: TO247
WMJ40N50D1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMJ40N50D1 Datasheet (PDF)
wmj40n50d1 wmpn40n50d1.pdf
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WMJ40N50D1 WMPN40N50D1500V 40A 0.1 N-ch Power MOSFETDescriptionTO-247TO-3PNWMOSTM D1 is Wayons 1st generationTABTABVDMOS family that is dramatic reductionin on-resistance and ultra-low gate chargefor applications requiring high powerdensity and high efficiency. And it is veryrobust and RoHS compliant.GDGSDSFeatures Typ.R =0.1@V =10VDS(on) GS
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .