All MOSFET. WMJ40N50D1 Datasheet

 

WMJ40N50D1 Datasheet and Replacement


   Type Designator: WMJ40N50D1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 416 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 64 nS
   Cossⓘ - Output Capacitance: 700 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
   Package: TO247
 

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WMJ40N50D1 Datasheet (PDF)

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WMJ40N50D1

WMJ40N50D1 WMPN40N50D1500V 40A 0.1 N-ch Power MOSFETDescriptionTO-247TO-3PNWMOSTM D1 is Wayons 1st generationTABTABVDMOS family that is dramatic reductionin on-resistance and ultra-low gate chargefor applications requiring high powerdensity and high efficiency. And it is veryrobust and RoHS compliant.GDGSDSFeatures Typ.R =0.1@V =10VDS(on) GS

Datasheet: WMJ18N90D1 , WMJ20N50D1 , WMK20N50D1 , WML20N50D1 , WMJ220N20HG3 , WMJ27N80D1 , WMJ3N120D1 , WMO3N120D1 , P55NF06 , WMPN40N50D1 , WMJ4N150D1 , WMX4N150D1 , WMK4N150D1 , WMJ60N60EM , WMJ69N30DMH , WMJ80N60C4 , WMJ80N60F2 .

History: ISTP16NF06 | FDB1D7N10CL7 | MTBB5N10L3 | IRFRC20PBF | FDB0165N807L | FDBL9401-F085 | FDB024N08BL7

Keywords - WMJ40N50D1 MOSFET datasheet

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