WMJ40N50D1 PDF and Equivalents Search

 

WMJ40N50D1 Specs and Replacement

Type Designator: WMJ40N50D1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 416 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 64 nS

Cossⓘ - Output Capacitance: 700 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm

Package: TO247

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WMJ40N50D1 datasheet

 ..1. Size:2374K  way-on
 wmj40n50d1 wmpn40n50d1.pdf pdf_icon

WMJ40N50D1

WMJ40N50D1 WMPN40N50D1 500V 40A 0.1 N-ch Power MOSFET Description TO-247 TO-3PN WMOSTM D1 is Wayon s 1st generation TAB TAB VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. G D G S D S Features Typ.R =0.1 @V =10V DS(on) GS ... See More ⇒

Detailed specifications: WMJ18N90D1, WMJ20N50D1, WMK20N50D1, WML20N50D1, WMJ220N20HG3, WMJ27N80D1, WMJ3N120D1, WMO3N120D1, IRF3710, WMPN40N50D1, WMJ4N150D1, WMX4N150D1, WMK4N150D1, WMJ60N60EM, WMJ69N30DMH, WMJ80N60C4, WMJ80N60F2

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