WMPN40N50D1 MOSFET. Datasheet pdf. Equivalent
Type Designator: WMPN40N50D1
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 462 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 40 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 165.3 nC
trⓘ - Rise Time: 64 nS
Cossⓘ - Output Capacitance: 700 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
Package: TO3PN
WMPN40N50D1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMPN40N50D1 Datasheet (PDF)
..1. Size:2374K way-on
wmj40n50d1 wmpn40n50d1.pdf
wmj40n50d1 wmpn40n50d1.pdf
WMJ40N50D1 WMPN40N50D1500V 40A 0.1 N-ch Power MOSFETDescriptionTO-247TO-3PNWMOSTM D1 is Wayons 1st generationTABTABVDMOS family that is dramatic reductionin on-resistance and ultra-low gate chargefor applications requiring high powerdensity and high efficiency. And it is veryrobust and RoHS compliant.GDGSDSFeatures Typ.R =0.1@V =10VDS(on) GS
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
