All MOSFET. WMPN40N50D1 Datasheet

 

WMPN40N50D1 Datasheet and Replacement


   Type Designator: WMPN40N50D1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 462 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 165.3 nC
   tr ⓘ - Rise Time: 64 nS
   Cossⓘ - Output Capacitance: 700 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
   Package: TO3PN
 

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WMPN40N50D1 Datasheet (PDF)

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WMPN40N50D1

WMJ40N50D1 WMPN40N50D1500V 40A 0.1 N-ch Power MOSFETDescriptionTO-247TO-3PNWMOSTM D1 is Wayons 1st generationTABTABVDMOS family that is dramatic reductionin on-resistance and ultra-low gate chargefor applications requiring high powerdensity and high efficiency. And it is veryrobust and RoHS compliant.GDGSDSFeatures Typ.R =0.1@V =10VDS(on) GS

Datasheet: WMJ20N50D1 , WMK20N50D1 , WML20N50D1 , WMJ220N20HG3 , WMJ27N80D1 , WMJ3N120D1 , WMO3N120D1 , WMJ40N50D1 , IRFB4227 , WMJ4N150D1 , WMX4N150D1 , WMK4N150D1 , WMJ60N60EM , WMJ69N30DMH , WMJ80N60C4 , WMJ80N60F2 , WMJ80N65C4 .

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