WMJ60N60EM PDF and Equivalents Search

 

WMJ60N60EM Specs and Replacement

Type Designator: WMJ60N60EM

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 403 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 64 nS

Cossⓘ - Output Capacitance: 195 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm

Package: TO247

WMJ60N60EM substitution

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WMJ60N60EM datasheet

 ..1. Size:541K  way-on
 wmj60n60em.pdf pdf_icon

WMJ60N60EM

WM MJ60N60EM 600V 0.052 S 0 Super Junction Power MOSFET Descrip ption WMOSTM EM is Wayon s 3rd generation super W n junction MOSFET fa that is utilizing charge M amily balance te or extremely esistance echnology fo y low on-re T and low ga ce. WMOSTM EM is ate charge performanc suitable fo applicat which require superior or tions h S D G power density and o... See More ⇒

Detailed specifications: WMJ27N80D1, WMJ3N120D1, WMO3N120D1, WMJ40N50D1, WMPN40N50D1, WMJ4N150D1, WMX4N150D1, WMK4N150D1, P55NF06, WMJ69N30DMH, WMJ80N60C4, WMJ80N60F2, WMJ80N65C4, WMJ80N65F2, WMJ90N60C4, WMJ90N60F2, WMJ90N65C4

Keywords - WMJ60N60EM MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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