All MOSFET. WMJ60N60EM Datasheet

 

WMJ60N60EM Datasheet and Replacement


   Type Designator: WMJ60N60EM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 403 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 64 nS
   Cossⓘ - Output Capacitance: 195 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: TO247
 

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WMJ60N60EM Datasheet (PDF)

 ..1. Size:541K  way-on
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WMJ60N60EM

WMMJ60N60EM 600V 0.052 S0 Super Junction Power MOSFETDescripptionWMOSTM EM is Wayons 3rd generation super W n junction MOSFET fa that is utilizing charge M amily balance te or extremely esistance echnology fo y low on-reTand low ga ce. WMOSTM EM is ate charge performancsuitable fo applicat which require superior or tions h S D G power density and o

Datasheet: WMJ27N80D1 , WMJ3N120D1 , WMO3N120D1 , WMJ40N50D1 , WMPN40N50D1 , WMJ4N150D1 , WMX4N150D1 , WMK4N150D1 , IRFB4115 , WMJ69N30DMH , WMJ80N60C4 , WMJ80N60F2 , WMJ80N65C4 , WMJ80N65F2 , WMJ90N60C4 , WMJ90N60F2 , WMJ90N65C4 .

History: CRST049N08N | STP16NF06LFP

Keywords - WMJ60N60EM MOSFET datasheet

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