WMJ60N60EM MOSFET. Datasheet pdf. Equivalent
Type Designator: WMJ60N60EM
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 403 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 60 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 96 nC
trⓘ - Rise Time: 64 nS
Cossⓘ - Output Capacitance: 195 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: TO247
WMJ60N60EM Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMJ60N60EM Datasheet (PDF)
..1. Size:541K way-on
wmj60n60em.pdf
wmj60n60em.pdf
WMMJ60N60EM 600V 0.052 S0 Super Junction Power MOSFETDescripptionWMOSTM EM is Wayons 3rd generation super W n junction MOSFET fa that is utilizing charge M amily balance te or extremely esistance echnology fo y low on-reTand low ga ce. WMOSTM EM is ate charge performancsuitable fo applicat which require superior or tions h S D G power density and o
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