All MOSFET. WMJ69N30DMH Datasheet

 

WMJ69N30DMH Datasheet and Replacement


   Type Designator: WMJ69N30DMH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 568 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 65 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 61.2 nS
   Cossⓘ - Output Capacitance: 290 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
   Package: TO247
 

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WMJ69N30DMH Datasheet (PDF)

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WMJ69N30DMH

WMJ69N30DMH 300V 65A 55m N-ch Power MOSFET DescriptionWMJ69N30DMH is Wayons 1st generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is Svery robust and RoHS compliant. DGTO-247Features V = 300V, I = 65A DS DR

Datasheet: WMJ3N120D1 , WMO3N120D1 , WMJ40N50D1 , WMPN40N50D1 , WMJ4N150D1 , WMX4N150D1 , WMK4N150D1 , WMJ60N60EM , 8205A , WMJ80N60C4 , WMJ80N60F2 , WMJ80N65C4 , WMJ80N65F2 , WMJ90N60C4 , WMJ90N60F2 , WMJ90N65C4 , WMJ90N65F2 .

History: IRF9131 | WMJ220N20HG3 | SM4034NSKP | WMP15N60C4 | SM8404CSQ | WMK12N100C2 | WMJ36N65C4

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