WMJ69N30DMH Specs and Replacement
Type Designator: WMJ69N30DMH
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 568 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 65 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 61.2 nS
Cossⓘ - Output Capacitance: 290 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
Package: TO247
WMJ69N30DMH substitution
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WMJ69N30DMH datasheet
wmj69n30dmh.pdf
WMJ69N30DMH 300V 65A 55m N-ch Power MOSFET Description WMJ69N30DMH is Wayon s 1st generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is S very robust and RoHS compliant. D G TO-247 Features V = 300V, I = 65A DS D R ... See More ⇒
Detailed specifications: WMJ3N120D1, WMO3N120D1, WMJ40N50D1, WMPN40N50D1, WMJ4N150D1, WMX4N150D1, WMK4N150D1, WMJ60N60EM, 8205A, WMJ80N60C4, WMJ80N60F2, WMJ80N65C4, WMJ80N65F2, WMJ90N60C4, WMJ90N60F2, WMJ90N65C4, WMJ90N65F2
Keywords - WMJ69N30DMH MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: WMK072N12HG2 | WMK12N65D1B
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