WMJ69N30DMH MOSFET. Datasheet pdf. Equivalent
Type Designator: WMJ69N30DMH
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 568 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 65 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 61.2 nS
Cossⓘ - Output Capacitance: 290 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
Package: TO247
WMJ69N30DMH Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMJ69N30DMH Datasheet (PDF)
..1. Size:988K way-on
wmj69n30dmh.pdf
wmj69n30dmh.pdf
WMJ69N30DMH 300V 65A 55m N-ch Power MOSFET DescriptionWMJ69N30DMH is Wayons 1st generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is Svery robust and RoHS compliant. DGTO-247Features V = 300V, I = 65A DS DR
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
