All MOSFET. WMJ69N30DMH Datasheet

 

WMJ69N30DMH MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMJ69N30DMH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 568 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.2 V
   |Id|ⓘ - Maximum Drain Current: 65 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 383 nC
   trⓘ - Rise Time: 61.2 nS
   Cossⓘ - Output Capacitance: 290 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
   Package: TO247

 WMJ69N30DMH Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMJ69N30DMH Datasheet (PDF)

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 wmj69n30dmh.pdf

WMJ69N30DMH WMJ69N30DMH

WMJ69N30DMH 300V 65A 55m N-ch Power MOSFET DescriptionWMJ69N30DMH is Wayons 1st generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is Svery robust and RoHS compliant. DGTO-247Features V = 300V, I = 65A DS DR

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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