All MOSFET. WMJ99N60F2 Datasheet

 

WMJ99N60F2 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMJ99N60F2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 460 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 99 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 174 nC
   trⓘ - Rise Time: 123 nS
   Cossⓘ - Output Capacitance: 317 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0255 Ohm
   Package: TO247

 WMJ99N60F2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMJ99N60F2 Datasheet (PDF)

 ..1. Size:528K  way-on
 wmj99n60f2.pdf

WMJ99N60F2 WMJ99N60F2

WM F2 MJ99N60F 600V 0.022 S unction P MOSFETSuper Ju Power M TDescripptionWMOSTM F2 is Wa 2nd generation super ayons n junction MOSFET fam with fa body di F2 M mily ast iode. series pro all benefits of a fast switching ovide b f sSJ-MOSFE while of an extremely fa body ET ffering e ast diode. WM F2 makes especially resonant MOSTM e rS D G switching a s

 6.1. Size:528K  way-on
 wmj99n60c4.pdf

WMJ99N60F2 WMJ99N60F2

WM C4 MJ99N60C 600V 0.0195 S unction Power M TSuper Ju MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily balance te or extremely esistance echnology fo y low on-reand low ga charge performanc WMOSTM C4 is ate ce. suitable fo applicat which require superior or tions h S D G power density

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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