WMJ99N60F2 MOSFET Datasheet: N-Ch, 600V, 99A. Full specification with pinout and replacement list

WMJ99N60F2 Specs and Replacement

Type Designator: WMJ99N60F2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 460 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 99 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 123 nS

Cossⓘ - Output Capacitance: 317 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0255 Ohm

Package: TO247

WMJ99N60F2 substitution

- MOSFET ⓘ Cross-Reference Search

WMJ99N60F2 datasheet

..1. Size:528K way-on
wmj99n60f2.pdf pdf_icon

WM F2 MJ99N60F 600V 0.022 S unction P MOSFET Super Ju Power M T Descrip ption WMOSTM F2 is Wa 2nd generation super ayon s n junction MOSFET fam with fa body di F2 M mily ast iode. series pro all benefits of a fast switching ovide b f s SJ-MOSFE while of an extremely fa body ET ffering e ast diode. WM F2 makes especially resonant MOSTM e r S D G switching a s... See More ⇒

6.1. Size:528K way-on
wmj99n60c4.pdf pdf_icon

WM C4 MJ99N60C 600V 0.0195 S unction Power M T Super Ju MOSFET Descrip ption WMOSTM C4 is Wa 4th generation super ayon s n junction MOSFET fa that is utilizing charge M amily balance te or extremely esistance echnology fo y low on-re and low ga charge performanc WMOSTM C4 is ate ce. suitable fo applicat which require superior or tions h S D G power density ... See More ⇒

Detailed specifications: WMJ80N60F2, WMJ80N65C4, WMJ80N65F2, WMJ90N60C4, WMJ90N60F2, WMJ90N65C4, WMJ90N65F2, WMJ99N60C4, IRF4905, WMJ9N150D1, WMJ9N90D1B, WML9N90D1B, WMK020N06HG4, WMK023N08HGS, WMK028N08HGD, WMK028N10HG2, WMK028N10HGS