All MOSFET. WMJ9N150D1 Datasheet

 

WMJ9N150D1 Datasheet and Replacement


   Type Designator: WMJ9N150D1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 320 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 71 nS
   Cossⓘ - Output Capacitance: 189 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
   Package: TO247
 

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WMJ9N150D1 Datasheet (PDF)

 ..1. Size:1181K  way-on
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WMJ9N150D1

WMJ9N150D11500V 9A 2.9 N-ch Power MOSFETDescriptionTO-247WMOSTM D1 is Wayons 1st generationVDMOS family that is dramatic reductionin on-resistance and ultra-low gate chargefor applications requiring high powerdensity and high efficiency. And it is veryrobust and RoHS compliant.GDSFeatures R =2.9@V =10VDS(on) GS 100% avalanche tested Pb-freeHa

 9.1. Size:1354K  way-on
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WMJ9N150D1

WMJ9N90D1B WML9N90D1B900V 9A 0.88 N-ch Power MOSFETDescriptionTO-247 TO-220FWMOSTM D1 is Wayons 1st generationVDMOS family that is dramatic reductionin on-resistance and ultra-low gate chargefor applications requiring high powerdensity and high efficiency. And it is very GDGSDrobust and RoHS compliant.SFeatures Typ.R =0.88@V =10VDS(on) GS 100% av

Datasheet: WMJ80N65C4 , WMJ80N65F2 , WMJ90N60C4 , WMJ90N60F2 , WMJ90N65C4 , WMJ90N65F2 , WMJ99N60C4 , WMJ99N60F2 , IRLB4132 , WMJ9N90D1B , WML9N90D1B , WMK020N06HG4 , WMK023N08HGS , WMK028N08HGD , WMK028N10HG2 , WMK028N10HGS , WMK030N06HG4 .

History: IRFB260N

Keywords - WMJ9N150D1 MOSFET datasheet

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