WMJ9N150D1 Specs and Replacement

Type Designator: WMJ9N150D1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 320 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 71 nS

Cossⓘ - Output Capacitance: 189 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm

Package: TO247

WMJ9N150D1 substitution

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WMJ9N150D1 datasheet

 ..1. Size:1181K  way-on
 wmj9n150d1.pdf pdf_icon

WMJ9N150D1

WMJ9N150D1 1500V 9A 2.9 N-ch Power MOSFET Description TO-247 WMOSTM D1 is Wayon s 1st generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. G D S Features R =2.9 @V =10V DS(on) GS 100% avalanche tested Pb-free Ha... See More ⇒

 9.1. Size:1354K  way-on
 wmj9n90d1b wml9n90d1b.pdf pdf_icon

WMJ9N150D1

WMJ9N90D1B WML9N90D1B 900V 9A 0.88 N-ch Power MOSFET Description TO-247 TO-220F WMOSTM D1 is Wayon s 1st generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very G D G S D robust and RoHS compliant. S Features Typ.R =0.88 @V =10V DS(on) GS 100% av... See More ⇒

Detailed specifications: WMJ80N65C4, WMJ80N65F2, WMJ90N60C4, WMJ90N60F2, WMJ90N65C4, WMJ90N65F2, WMJ99N60C4, WMJ99N60F2, IRLB4132, WMJ9N90D1B, WML9N90D1B, WMK020N06HG4, WMK023N08HGS, WMK028N08HGD, WMK028N10HG2, WMK028N10HGS, WMK030N06HG4

Keywords - WMJ9N150D1 MOSFET specs

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