WMK175N10HG4 PDF and Equivalents Search

 

WMK175N10HG4 Specs and Replacement

Type Designator: WMK175N10HG4

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 73 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 46 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.6 nS

Cossⓘ - Output Capacitance: 197 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm

Package: TO220

WMK175N10HG4 substitution

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WMK175N10HG4 datasheet

 ..1. Size:599K  way-on
 wmk175n10hg4.pdf pdf_icon

WMK175N10HG4

WMK175N10HG4 100V N-Channel Enhancement Mode Power MOSFET Description WMK175N10HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D G Features TO-220 V = 100V, I = ... See More ⇒

 5.1. Size:604K  way-on
 wmk175n10lg4.pdf pdf_icon

WMK175N10HG4

WMK175N10LG4 100V N-Channel Enhancement Mode Power MOSFET Description WMK175N10LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D G Features TO-220 V = 100V, I = ... See More ⇒

Detailed specifications: WMK119N12LG4, WMK120N04TS, WMK13N50D1B, WML13N50D1B, WMK15N50D1B, WML15N50D1B, WMK161N15T2, WMK16N10T1, STP65NF06, WMK175N10LG4, WMK180N03TS, WMK18N50D1B, WML18N50D1B, WMJ18N50D1B, WMK18P10TS, WMK190N03TS, WMK190N15HG4

Keywords - WMK175N10HG4 MOSFET specs

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