All MOSFET. WMK175N10HG4 Datasheet

 

WMK175N10HG4 Datasheet and Replacement


   Type Designator: WMK175N10HG4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 73 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 46 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3.6 nS
   Cossⓘ - Output Capacitance: 197 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
   Package: TO220
 

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WMK175N10HG4 Datasheet (PDF)

 ..1. Size:599K  way-on
 wmk175n10hg4.pdf pdf_icon

WMK175N10HG4

WMK175N10HG4 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMK175N10HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V = 100V, I =

 5.1. Size:604K  way-on
 wmk175n10lg4.pdf pdf_icon

WMK175N10HG4

WMK175N10LG4 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMK175N10LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V = 100V, I =

Datasheet: WMK119N12LG4 , WMK120N04TS , WMK13N50D1B , WML13N50D1B , WMK15N50D1B , WML15N50D1B , WMK161N15T2 , WMK16N10T1 , IRFZ48N , WMK175N10LG4 , WMK180N03TS , WMK18N50D1B , WML18N50D1B , WMJ18N50D1B , WMK18P10TS , WMK190N03TS , WMK190N15HG4 .

History: SE20N110 | H5N3005LD

Keywords - WMK175N10HG4 MOSFET datasheet

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