All MOSFET. WMK190N03TS Datasheet

 

WMK190N03TS Datasheet and Replacement


   Type Designator: WMK190N03TS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 192 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 190 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 672 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm
   Package: TO220
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WMK190N03TS Datasheet (PDF)

 ..1. Size:620K  way-on
 wmk190n03ts.pdf pdf_icon

WMK190N03TS

WMK190N03TS 30V N-Channel Enhancement Mode Power MOSFET DescriptionWMK190N03TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.Features SDGTO-220 V = 30V, I = 190A DS DR

 7.1. Size:602K  way-on
 wmk190n15hg4.pdf pdf_icon

WMK190N03TS

WMK190N15HG4 150V N-Channel Enhancement Mode Power MOSFET DescriptionWMK190N15HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDFeatures GTO-220 V = 150V, I =

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: AFN9987 | SM2F04NSU | BRCS200P03DP | SSF80R360S2 | APT1002R4AN | TSM4424CS | SFB052N100C2

Keywords - WMK190N03TS MOSFET datasheet

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