WMK190N03TS MOSFET. Datasheet pdf. Equivalent
Type Designator: WMK190N03TS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 192 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 190 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 100 nC
Rise Time (tr): 27 nS
Drain-Source Capacitance (Cd): 672 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0028 Ohm
Package: TO220
WMK190N03TS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMK190N03TS Datasheet (PDF)
wmk190n03ts.pdf
WMK190N03TS 30V N-Channel Enhancement Mode Power MOSFET DescriptionWMK190N03TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.Features SDGTO-220 V = 30V, I = 190A DS DR
wmk190n15hg4.pdf
WMK190N15HG4 150V N-Channel Enhancement Mode Power MOSFET DescriptionWMK190N15HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDFeatures GTO-220 V = 150V, I =
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: VBZM40N03
