All MOSFET. WMK190N03TS Datasheet

 

WMK190N03TS Datasheet and Replacement


   Type Designator: WMK190N03TS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 192 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 190 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 100 nC
   tr ⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 672 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm
   Package: TO220
 

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WMK190N03TS Datasheet (PDF)

 ..1. Size:620K  way-on
 wmk190n03ts.pdf pdf_icon

WMK190N03TS

WMK190N03TS 30V N-Channel Enhancement Mode Power MOSFET DescriptionWMK190N03TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.Features SDGTO-220 V = 30V, I = 190A DS DR

 7.1. Size:602K  way-on
 wmk190n15hg4.pdf pdf_icon

WMK190N03TS

WMK190N15HG4 150V N-Channel Enhancement Mode Power MOSFET DescriptionWMK190N15HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDFeatures GTO-220 V = 150V, I =

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , SPP20N60C3 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: 2N6901

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