All MOSFET. WMK190N15HG4 Datasheet

 

WMK190N15HG4 Datasheet and Replacement


   Type Designator: WMK190N15HG4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 147 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 24.8 nC
   tr ⓘ - Rise Time: 5.2 nS
   Cossⓘ - Output Capacitance: 148 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0195 Ohm
   Package: TO220
 

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WMK190N15HG4 Datasheet (PDF)

 ..1. Size:602K  way-on
 wmk190n15hg4.pdf pdf_icon

WMK190N15HG4

WMK190N15HG4 150V N-Channel Enhancement Mode Power MOSFET DescriptionWMK190N15HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDFeatures GTO-220 V = 150V, I =

 7.1. Size:620K  way-on
 wmk190n03ts.pdf pdf_icon

WMK190N15HG4

WMK190N03TS 30V N-Channel Enhancement Mode Power MOSFET DescriptionWMK190N03TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.Features SDGTO-220 V = 30V, I = 190A DS DR

Datasheet: WMK175N10HG4 , WMK175N10LG4 , WMK180N03TS , WMK18N50D1B , WML18N50D1B , WMJ18N50D1B , WMK18P10TS , WMK190N03TS , 8N60 , WMK220N20HG3 , WMK25N06TS , WMK25N10T1 , WMK28N15T2 , WMK340N20HG2 , WMK4N90D1B , WML4N90D1B , WMM4N90D1B .

Keywords - WMK190N15HG4 MOSFET datasheet

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