WMK190N15HG4 MOSFET Datasheet: N-Ch, 150V, 60A. Full specification with pinout and replacement list

WMK190N15HG4 Specs and Replacement

Type Designator: WMK190N15HG4

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 147 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.2 nS

Cossⓘ - Output Capacitance: 148 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0195 Ohm

Package: TO220

WMK190N15HG4 substitution

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WMK190N15HG4 datasheet

..1. Size:602K way-on
wmk190n15hg4.pdf pdf_icon

WMK190N15HG4 150V N-Channel Enhancement Mode Power MOSFET Description WMK190N15HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D Features G TO-220 V = 150V, I = ... See More ⇒

7.1. Size:620K way-on
wmk190n03ts.pdf pdf_icon

WMK190N03TS 30V N-Channel Enhancement Mode Power MOSFET Description WMK190N03TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features S D G TO-220 V = 30V, I = 190A DS D R ... See More ⇒

Detailed specifications: WMK175N10HG4, WMK175N10LG4, WMK180N03TS, WMK18N50D1B, WML18N50D1B, WMJ18N50D1B, WMK18P10TS, WMK190N03TS, IRFB7545, WMK220N20HG3, WMK25N06TS, WMK25N10T1, WMK28N15T2, WMK340N20HG2, WMK4N90D1B, WML4N90D1B, WMM4N90D1B