WMK340N20HG2 MOSFET. Datasheet pdf. Equivalent
Type Designator: WMK340N20HG2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 173.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 50 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Total Gate Charge (Qg): 23 nC
Rise Time (tr): 20 nS
Drain-Source Capacitance (Cd): 141 pF
Maximum Drain-Source On-State Resistance (Rds): 0.034 Ohm
Package: TO220
WMK340N20HG2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMK340N20HG2 Datasheet (PDF)
..1. Size:471K way-on
wmk340n20hg2.pdf
wmk340n20hg2.pdf
WMK340N20HG2 200V N-Channel Enhancement Mode Power MOSFET DescriptionWMK340N20HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V = 200V, I =
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: TSP120N10AT
