WMK340N20HG2 Specs and Replacement
Type Designator: WMK340N20HG2
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 173.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 141 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.034 Ohm
Package: TO220
WMK340N20HG2 substitution
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WMK340N20HG2 datasheet
wmk340n20hg2.pdf
WMK340N20HG2 200V N-Channel Enhancement Mode Power MOSFET Description WMK340N20HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D G Features TO-220 V = 200V, I = ... See More ⇒
Detailed specifications: WMJ18N50D1B, WMK18P10TS, WMK190N03TS, WMK190N15HG4, WMK220N20HG3, WMK25N06TS, WMK25N10T1, WMK28N15T2, MMIS60R580P, WMK4N90D1B, WML4N90D1B, WMM4N90D1B, WMK50N06TS, WMK6N90D1, WML6N90D1, WMM6N90D1, WMK75N03T1
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