All MOSFET. WMK340N20HG2 Datasheet

 

WMK340N20HG2 Datasheet and Replacement


   Type Designator: WMK340N20HG2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 173.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 23 nC
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 141 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.034 Ohm
   Package: TO220
 

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WMK340N20HG2 Datasheet (PDF)

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WMK340N20HG2

WMK340N20HG2 200V N-Channel Enhancement Mode Power MOSFET DescriptionWMK340N20HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V = 200V, I =

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History: HGP220N25S

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