WMK50N06TS PDF and Equivalents Search

 

WMK50N06TS Specs and Replacement

Type Designator: WMK50N06TS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 69.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21.2 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm

Package: TO220

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WMK50N06TS datasheet

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WMK50N06TS

WMK50N06TS 60V N-Channel Enhancement Mode Power MOSFET Description WMK50N06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S Features D G TO-220 V = 60V, I = 50A DS D R ... See More ⇒

Detailed specifications: WMK220N20HG3, WMK25N06TS, WMK25N10T1, WMK28N15T2, WMK340N20HG2, WMK4N90D1B, WML4N90D1B, WMM4N90D1B, IRFP064N, WMK6N90D1, WML6N90D1, WMM6N90D1, WMK75N03T1, WMK7N65D1B, WMH7N65D1B, WML7N65D1B, WMO7N65D1B

Keywords - WMK50N06TS MOSFET specs

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