WMK50N06TS Specs and Replacement
Type Designator: WMK50N06TS
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 69.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 21.2 nS
Cossⓘ - Output Capacitance: 120 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
Package: TO220
WMK50N06TS substitution
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WMK50N06TS datasheet
wmk50n06ts.pdf
WMK50N06TS 60V N-Channel Enhancement Mode Power MOSFET Description WMK50N06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S Features D G TO-220 V = 60V, I = 50A DS D R ... See More ⇒
Detailed specifications: WMK220N20HG3, WMK25N06TS, WMK25N10T1, WMK28N15T2, WMK340N20HG2, WMK4N90D1B, WML4N90D1B, WMM4N90D1B, IRFP064N, WMK6N90D1, WML6N90D1, WMM6N90D1, WMK75N03T1, WMK7N65D1B, WMH7N65D1B, WML7N65D1B, WMO7N65D1B
Keywords - WMK50N06TS MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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