WMK50N06TS Datasheet and Replacement
Type Designator: WMK50N06TS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 69.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 46 nC
tr ⓘ - Rise Time: 21.2 nS
Cossⓘ - Output Capacitance: 120 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
Package: TO220
WMK50N06TS substitution
WMK50N06TS Datasheet (PDF)
..1. Size:443K way-on
wmk50n06ts.pdf
wmk50n06ts.pdf
WMK50N06TS 60V N-Channel Enhancement Mode Power MOSFET DescriptionWMK50N06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. SFeatures DGTO-220 V = 60V, I = 50A DS D R
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , SPP20N60C3 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
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