All MOSFET. WMK50N06TS Datasheet

 

WMK50N06TS Datasheet and Replacement


   Type Designator: WMK50N06TS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 69.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 21.2 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: TO220
 

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WMK50N06TS Datasheet (PDF)

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WMK50N06TS

WMK50N06TS 60V N-Channel Enhancement Mode Power MOSFET DescriptionWMK50N06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. SFeatures DGTO-220 V = 60V, I = 50A DS D R

Datasheet: WMK220N20HG3 , WMK25N06TS , WMK25N10T1 , WMK28N15T2 , WMK340N20HG2 , WMK4N90D1B , WML4N90D1B , WMM4N90D1B , 5N50 , WMK6N90D1 , WML6N90D1 , WMM6N90D1 , WMK75N03T1 , WMK7N65D1B , WMH7N65D1B , WML7N65D1B , WMO7N65D1B .

History: VBZL120N08

Keywords - WMK50N06TS MOSFET datasheet

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