WMK6N90D1 Specs and Replacement
Type Designator: WMK6N90D1
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 181 nS
Cossⓘ - Output Capacitance: 123 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: TO220
WMK6N90D1 substitution
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WMK6N90D1 datasheet
wmk6n90d1 wml6n90d1 wmm6n90d1.pdf
WMK6N90D1 WML6N90D1 WMM6N90D1 900V 6A 1.7 N-ch Power MOSFET Description TO-263 TO-220 TO-220F WMOSTM D1 is Wayon s 1st generation TAB VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. D G G G D D S S S Features Typ.R =1.7 @V =... See More ⇒
Detailed specifications: WMK25N06TS, WMK25N10T1, WMK28N15T2, WMK340N20HG2, WMK4N90D1B, WML4N90D1B, WMM4N90D1B, WMK50N06TS, AO4468, WML6N90D1, WMM6N90D1, WMK75N03T1, WMK7N65D1B, WMH7N65D1B, WML7N65D1B, WMO7N65D1B, WMK80N04T1
Keywords - WMK6N90D1 MOSFET specs
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