WMK6N90D1 MOSFET. Datasheet pdf. Equivalent
Type Designator: WMK6N90D1
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 86.2 nC
trⓘ - Rise Time: 181 nS
Cossⓘ - Output Capacitance: 123 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: TO220
WMK6N90D1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMK6N90D1 Datasheet (PDF)
..1. Size:1270K way-on
wmk6n90d1 wml6n90d1 wmm6n90d1.pdf
wmk6n90d1 wml6n90d1 wmm6n90d1.pdf
WMK6N90D1 WML6N90D1 WMM6N90D1900V 6A 1.7 N-ch Power MOSFETDescriptionTO-263TO-220 TO-220FWMOSTM D1 is Wayons 1st generationTABVDMOS family that is dramatic reductionin on-resistance and ultra-low gate chargefor applications requiring high powerdensity and high efficiency. And it is veryrobust and RoHS compliant.DGG GDDS SSFeatures Typ.R =1.7@V =
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