WMK75N03T1 Datasheet and Replacement
Type Designator: WMK75N03T1
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 59 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id| ⓘ - Maximum Drain Current: 75 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 19 nC
tr ⓘ - Rise Time: 14.8 nS
Cossⓘ - Output Capacitance: 285 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
Package: TO220
WMK75N03T1 substitution
WMK75N03T1 Datasheet (PDF)
wmk75n03t1.pdf

WMK75N03T1 30V N-Channel Enhancement Mode Power MOSFET DescriptionWMK75N03T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features V = 30V, I = 75A DS DSDGR
Datasheet: WMK340N20HG2 , WMK4N90D1B , WML4N90D1B , WMM4N90D1B , WMK50N06TS , WMK6N90D1 , WML6N90D1 , WMM6N90D1 , IRF3205 , WMK7N65D1B , WMH7N65D1B , WML7N65D1B , WMO7N65D1B , WMK80N04T1 , WMK80N06TS , WMK80N08TS , WMK90N08TS .
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