WMO7N65D1B MOSFET. Datasheet pdf. Equivalent
Type Designator: WMO7N65D1B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 24.3 nC
trⓘ - Rise Time: 27.4 nS
Cossⓘ - Output Capacitance: 92 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.35 Ohm
Package: TO252
WMO7N65D1B Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMO7N65D1B Datasheet (PDF)
..1. Size:1960K way-on
wmk7n65d1b wmh7n65d1b wml7n65d1b wmo7n65d1b.pdf
wmk7n65d1b wmh7n65d1b wml7n65d1b wmo7n65d1b.pdf
WMK7N65D1B WMH7N65D1BWML7N65D1B WMO7N65D1B650V 7A 1.12 N-ch Power MOSFETDescriptionTO-220 TO-220FTABWMOSTM D1 is Wayons 1st generationVDMOS family that is dramatic reductionin on-resistance and ultra-low gate chargefor applications requiring high powerGGDDSSdensity and high efficiency. And it is veryTO-251-L3.5TO-252robust and RoHS compliant.TABTAB
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