WMO7N65D1B PDF and Equivalents Search

 

WMO7N65D1B Specs and Replacement

Type Designator: WMO7N65D1B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 27.4 nS

Cossⓘ - Output Capacitance: 92 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.35 Ohm

Package: TO252

WMO7N65D1B substitution

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WMO7N65D1B datasheet

 ..1. Size:1960K  way-on
 wmk7n65d1b wmh7n65d1b wml7n65d1b wmo7n65d1b.pdf pdf_icon

WMO7N65D1B

WMK7N65D1B WMH7N65D1B WML7N65D1B WMO7N65D1B 650V 7A 1.12 N-ch Power MOSFET Description TO-220 TO-220F TAB WMOSTM D1 is Wayon s 1st generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power G G D D S S density and high efficiency. And it is very TO-251-L3.5 TO-252 robust and RoHS compliant. TAB TAB... See More ⇒

Detailed specifications: WMK50N06TS, WMK6N90D1, WML6N90D1, WMM6N90D1, WMK75N03T1, WMK7N65D1B, WMH7N65D1B, WML7N65D1B, IRF540N, WMK80N04T1, WMK80N06TS, WMK80N08TS, WMK90N08TS, WMK9N50D1B, WML9N50D1B, WMO9N50D1B, WML030N06HG4

Keywords - WMO7N65D1B MOSFET specs

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