WMO9N50D1B PDF and Equivalents Search

 

WMO9N50D1B Specs and Replacement

Type Designator: WMO9N50D1B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 104 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 36 nS

Cossⓘ - Output Capacitance: 110 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm

Package: TO252

WMO9N50D1B substitution

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WMO9N50D1B datasheet

 ..1. Size:1621K  way-on
 wmk9n50d1b wml9n50d1b wmo9n50d1b.pdf pdf_icon

WMO9N50D1B

WMK9N50D1B WML9N50D1B WMO9N50D1B 500V 9A 0.68 N-ch Power MOSFET Description TO-252 TO-220 TO-220F WMOSTM D1 is Wayon s 1st generation VDMOS TAB TAB family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. D G And it is very robust and RoHS compliant. S G D S G D S ... See More ⇒

 9.1. Size:1203K  way-on
 wmo9n65d1.pdf pdf_icon

WMO9N50D1B

WMO9N65D1 650V 9A 0.85 N-ch Power MOSFET Description TO-252 WMOSTM D1 is Wayon s 1st generation TAB VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power D G density and high efficiency. And it is very S robust and RoHS compliant. Features Typ.R =0.85 @V =10V DS(on) GS 100% avalanche tested Pb-... See More ⇒

Detailed specifications: WML7N65D1B, WMO7N65D1B, WMK80N04T1, WMK80N06TS, WMK80N08TS, WMK90N08TS, WMK9N50D1B, WML9N50D1B, IRLZ44N, WML030N06HG4, WML03N80M3, WMN03N80M3, WMM03N80M3, WMO03N80M3, WMP03N80M3, WMK03N80M3, WML05N100C2

Keywords - WMO9N50D1B MOSFET specs

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