All MOSFET. WMO9N50D1B Datasheet

 

WMO9N50D1B Datasheet and Replacement


   Type Designator: WMO9N50D1B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 104 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: TO252
 

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WMO9N50D1B Datasheet (PDF)

 ..1. Size:1621K  way-on
 wmk9n50d1b wml9n50d1b wmo9n50d1b.pdf pdf_icon

WMO9N50D1B

WMK9N50D1B WML9N50D1B WMO9N50D1B 500V 9A 0.68 N-ch Power MOSFET Description TO-252 TO-220 TO-220F WMOSTM D1 is Wayons 1st generation VDMOS TAB TAB family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. D G And it is very robust and RoHS compliant. S G D S G D S

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WMO9N50D1B

WMO9N65D1650V 9A 0.85 N-ch Power MOSFETDescriptionTO-252WMOSTM D1 is Wayons 1st generationTABVDMOS family that is dramatic reductionin on-resistance and ultra-low gate chargefor applications requiring high powerDGdensity and high efficiency. And it is verySrobust and RoHS compliant.Features Typ.R =0.85@V =10VDS(on) GS 100% avalanche tested Pb-

Datasheet: WML7N65D1B , WMO7N65D1B , WMK80N04T1 , WMK80N06TS , WMK80N08TS , WMK90N08TS , WMK9N50D1B , WML9N50D1B , IRFP260N , WML030N06HG4 , WML03N80M3 , WMN03N80M3 , WMM03N80M3 , WMO03N80M3 , WMP03N80M3 , WMK03N80M3 , WML05N100C2 .

Keywords - WMO9N50D1B MOSFET datasheet

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