WML060N10HGS MOSFET. Datasheet pdf. Equivalent
Type Designator: WML060N10HGS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 54.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 65 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 81.8 nC
trⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 649 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0062 Ohm
Package: TO220F
WML060N10HGS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WML060N10HGS Datasheet (PDF)
wml060n10hgs.pdf
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WML060N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWML060N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device GDSis well suited for high efficiency fast switching applications. TO-220FFeatures V = 100V, I = 65A DS
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WML06N80M3, W 80M3, WM M3 WMN06N8 MM06N80MWMO0 80M3, WM M3 06N80M3, WMP06N8 MK06N80M 800 Junction ET0V 1.8 Super J n Power MOSFEDescripptionWMOSTM M3 is Wayo neration 800M ons 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G Tand low ga charge perf
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