WML060N10HGS MOSFET Datasheet: N-Ch, 100V, 65A. Full specification with pinout and replacement list

WML060N10HGS Specs and Replacement

Type Designator: WML060N10HGS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 54.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 65 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 649 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0062 Ohm

Package: TO220F

WML060N10HGS substitution

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WML060N10HGS datasheet

..1. Size:1066K way-on
wml060n10hgs.pdf pdf_icon

WML060N10HGS 100V N-Channel Enhancement Mode Power MOSFET Description WML060N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device GDS is well suited for high efficiency fast switching applications. TO-220F Features V = 100V, I = 65A DS ... See More ⇒

9.1. Size:673K way-on
wml06n80m3 wmn06n80m3 wmm06n80m3 wmo06n80m3 wmp06n80m3 wmk06n80m3.pdf pdf_icon

WML06N80M3, W 80M3, WM M3 WMN06N8 MM06N80M WMO0 80M3, WM M3 06N80M3, WMP06N8 MK06N80M 800 Junction ET 0V 1.8 Super J n Power MOSFE Descrip ption WMOSTM M3 is Wayo neration 800 M on s 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D G G G T and low ga charge perf... See More ⇒

Detailed specifications: WMP05N105C2, WMO05N105C2, WML05N80M3, WMN05N80M3, WMM05N80M3, WMO05N80M3, WMP05N80M3, WMK05N80M3, IRFP260, WML06N80M3, WMN06N80M3, WMM06N80M3, WMO06N80M3, WMP06N80M3, WMK06N80M3, WML071N15HG2, WML07N100C2