All MOSFET. WML060N10HGS Datasheet

 

WML060N10HGS Datasheet and Replacement


   Type Designator: WML060N10HGS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 54.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 65 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 649 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0062 Ohm
   Package: TO220F
 

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WML060N10HGS Datasheet (PDF)

 ..1. Size:1066K  way-on
 wml060n10hgs.pdf pdf_icon

WML060N10HGS

WML060N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWML060N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device GDSis well suited for high efficiency fast switching applications. TO-220FFeatures V = 100V, I = 65A DS

 9.1. Size:673K  way-on
 wml06n80m3 wmn06n80m3 wmm06n80m3 wmo06n80m3 wmp06n80m3 wmk06n80m3.pdf pdf_icon

WML060N10HGS

WML06N80M3, W 80M3, WM M3 WMN06N8 MM06N80MWMO0 80M3, WM M3 06N80M3, WMP06N8 MK06N80M 800 Junction ET0V 1.8 Super J n Power MOSFEDescripptionWMOSTM M3 is Wayo neration 800M ons 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G Tand low ga charge perf

Datasheet: WMP05N105C2 , WMO05N105C2 , WML05N80M3 , WMN05N80M3 , WMM05N80M3 , WMO05N80M3 , WMP05N80M3 , WMK05N80M3 , 4435 , WML06N80M3 , WMN06N80M3 , WMM06N80M3 , WMO06N80M3 , WMP06N80M3 , WMK06N80M3 , WML071N15HG2 , WML07N100C2 .

History: WPMD2010 | SM1F14NSKP

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