WMJ07N100C2 Datasheet and Replacement
Type Designator: WMJ07N100C2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 65 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 18 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: TO247
WMJ07N100C2 substitution
WMJ07N100C2 Datasheet (PDF)
wml07n100c2 wmn07n100c2 wmm07n100c2 wmj07n100c2 wmo07n100c2 wmp07n100c2 wmk07n100c2.pdf
WM 2, WMN07N MM07N100CML07N100C2 N100C2, WM C2 WMJ07N100C2, WM C2, WMP07N MK07N100CMO07N100C N100C2, WM C2 1000V Super Ju MOSFETV 2.0 S unction Power M TDescripptionWMOSTM C2 is Wa 2nd generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G and low
wml07n105c2 wmn07n105c2 wmm07n105c2 wmj07n105c2 wmo07n105c2 wmp07n105c2 wmk07n105c2.pdf
WM 2, WMN07N MM07N105CML07N105C2 N105C2, WM C2 WMJ07N105C2, WM C2, WMP07N MK07N105CMO07N105C N105C2, WM C2 1050V Super Ju MOSFETV 2.0 S unction Power M TDescripptionWMOSTM C2 is Wa 2nd generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G and low
Datasheet: WMM06N80M3 , WMO06N80M3 , WMP06N80M3 , WMK06N80M3 , WML071N15HG2 , WML07N100C2 , WMN07N100C2 , WMM07N100C2 , IRLZ44N , WMO07N100C2 , WMP07N100C2 , WMK07N100C2 , WML07N105C2 , WMN07N105C2 , WMM07N105C2 , WMJ07N105C2 , WMO07N105C2 .
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