WML099N10HGS PDF and Equivalents Search

 

WML099N10HGS Specs and Replacement

Type Designator: WML099N10HGS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 27 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 37 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 28.8 nS

Cossⓘ - Output Capacitance: 300 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0099 Ohm

Package: TO220F

WML099N10HGS substitution

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WML099N10HGS datasheet

 ..1. Size:510K  way-on
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WML099N10HGS

WML099N10HGS 100V N-Channel Enhancement Mode Power MOSFET Description WML099N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This GDS device is well suited for high efficiency fast switching applications. TO-220F Features V = 100V, I = 37A DS ... See More ⇒

Detailed specifications: WMP08N70EM, WMO08N70EM, WML08N80M3, WMN08N80M3, WMM08N80M3, WMO08N80M3, WMP08N80M3, WMK08N80M3, IRFB31N20D, WML100N07TS, WML10N100C2, WMN10N100C2, WMM10N100C2, WMJ10N100C2, WMO10N100C2, WMP10N100C2, WMK10N100C2

Keywords - WML099N10HGS MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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