All MOSFET. WML099N10HGS Datasheet

 

WML099N10HGS Datasheet and Replacement


   Type Designator: WML099N10HGS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 27 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 37 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 59.5 nC
   tr ⓘ - Rise Time: 28.8 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0099 Ohm
   Package: TO220F
 

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WML099N10HGS Datasheet (PDF)

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WML099N10HGS

WML099N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWML099N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This GDSdevice is well suited for high efficiency fast switching applications. TO-220FFeatures V = 100V, I = 37A DS

Datasheet: WMP08N70EM , WMO08N70EM , WML08N80M3 , WMN08N80M3 , WMM08N80M3 , WMO08N80M3 , WMP08N80M3 , WMK08N80M3 , IRF730 , WML100N07TS , WML10N100C2 , WMN10N100C2 , WMM10N100C2 , WMJ10N100C2 , WMO10N100C2 , WMP10N100C2 , WMK10N100C2 .

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