STG8205
MOSFET. Datasheet pdf. Equivalent
Type Designator: STG8205
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5
V
|Id|ⓘ - Maximum Drain Current: 6
A
Qgⓘ - Total Gate Charge: 8.8
nC
Cossⓘ -
Output Capacitance: 135
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025
Ohm
Package:
TSSOP8
STG8205
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STG8205
Datasheet (PDF)
..1. Size:192K samhop
stg8205.pdf 
GreenProductSTG8205aS mHop Microelectronics C orp.Ver 1.0Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.26 @ VGS=4.5VSuface Mount Package.20V 6A35 @ VGS=2.5VD1 D2TS S OP1 8D1/D2 D1/D22 7S 1 S 2G 1G 23 6S 1 S 24 5 G 2G 1
8.1. Size:124K samhop
stg8209.pdf
GreenrrPPrPrProductSTG8209aS mHop Microelectronics C orp.Ver 2.1Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.26 @ VGS=4.0VSuface Mount Package.20V 6AESD Protected.40 @ VGS=2.5V( 1 ) D2( 8 )D1TSSOP1 8D1/D2 D1/D2( 5 )G2
9.1. Size:129K samhop
stg8211.pdf
GreenProductS TG 8211S amHop Microelectronics C orp.J uly. 03. 2006 R ev1.2Dual N-Channel E nhancement Mode Field E ffect TransistorPR ODUC T S UMMAR Y FEATUR ESS uper high dense cell design for low R DS (ON).VDS S ID R DS (ON) ( m ) MaxR ugged and reliable.13.5 @ VGS =4.0V20V 10A Surface Mount Package.18 @ VGS =2.5VESD Protected.D1 D2TSSOP1 8D1/D2 D1/D22 7
Datasheet: STM4472
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