WMP12N80M3 Datasheet and Replacement
Type Designator: WMP12N80M3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 86 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 41 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.62 Ohm
Package: TO251
WMP12N80M3 substitution
WMP12N80M3 Datasheet (PDF)
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WML12N80M3, W 80M3, WM M3 WMN12N8 MM12N80MWMO1 80M3, WM M3 12N80M3, WMP12N8 MK12N80M 800V 0.53 S TV Super Junction Power MOSFETDescripptionWMOSTM M3 is Wayo neration 800M ons 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G Tand low ga charge perfo
Datasheet: WML12N65D1 , WMK12N65D1 , WML12N65D1B , WMK12N65D1B , WML12N80M3 , WMN12N80M3 , WMM12N80M3 , WMO12N80M3 , P60NF06 , WMK12N80M3 , WML13N65EM , WMK13N65EM , WMM13N65EM , WMN13N65EM , WMP13N65EM , WMO13N65EM , WML13N70EM .
History: SWF8N65DB | IRFB4137PBF
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History: SWF8N65DB | IRFB4137PBF



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