All MOSFET. WMP12N80M3 Datasheet

 

WMP12N80M3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMP12N80M3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 86 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 19 nC
   trⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 41 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.62 Ohm
   Package: TO251

 WMP12N80M3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMP12N80M3 Datasheet (PDF)

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wml12n80m3 wmn12n80m3 wmm12n80m3 wmo12n80m3 wmp12n80m3 wmk12n80m3.pdf

WMP12N80M3
WMP12N80M3

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