All MOSFET. WMK20N70D1 Datasheet

 

WMK20N70D1 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMK20N70D1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 156 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 66 nC
   trⓘ - Rise Time: 190 nS
   Cossⓘ - Output Capacitance: 230 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm
   Package: TO220

 WMK20N70D1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMK20N70D1 Datasheet (PDF)

 ..1. Size:1344K  way-on
 wml20n70d1 wmk20n70d1.pdf

WMK20N70D1 WMK20N70D1

WML20N70D1 WMK20N70D1 700V 20A 0.42 N-ch Power MOSFET Description TO-220 TO-220F WMOSTM D1 is Wayons 1st generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications TAB requiring high power density and high efficiency. And it is very robust and RoHS compliant. G G D D S S Features Typ.R =0.42@V =10V

 8.1. Size:1271K  way-on
 wmj20n50d1 wmk20n50d1 wml20n50d1.pdf

WMK20N70D1 WMK20N70D1

WMJ20N50D1 WMK20N50D1 WML20N50D1500V 20A 0.22 N-ch Power MOSFETDescriptionTO-247 TO-220 TO-220FTABWMOSTM D1 is Wayons 1st generation VDMOSTABfamily that is dramatic reduction inon-resistance and ultra-low gate charge forapplications requiring high power density andhigh efficiency. And it is very robust and RoHScompliant.G GGD DDS SSFeatures V =550V@

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: AOTF4N90

 

 
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