All MOSFET. WML340N20HG2 Datasheet

 

WML340N20HG2 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WML340N20HG2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 59.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 28 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 141 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.034 Ohm
   Package: TO220F

 WML340N20HG2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WML340N20HG2 Datasheet (PDF)

 ..1. Size:540K  way-on
 wml340n20hg2.pdf

WML340N20HG2 WML340N20HG2

WML340N20HG2 200V N-Channel Enhancement Mode Power MOSFET DescriptionWML340N20HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. GDSFeatures TO-220F V = 200V, I = 28A

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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