All MOSFET. WML340N20HG2 Datasheet

 

WML340N20HG2 Datasheet and Replacement


   Type Designator: WML340N20HG2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 59.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 28 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 141 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.034 Ohm
   Package: TO220F
 

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WML340N20HG2 Datasheet (PDF)

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WML340N20HG2

WML340N20HG2 200V N-Channel Enhancement Mode Power MOSFET DescriptionWML340N20HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. GDSFeatures TO-220F V = 200V, I = 28A

Datasheet: WMN30N65EM , WMM30N65EM , WMJ30N65EM , WML30N80M3 , WMK30N80M3 , WMN30N80M3 , WMM30N80M3 , WMJ30N80M3 , K3569 , WML36N60C4 , WMK36N60C4 , WMN36N60C4 , WMM36N60C4 , WMJ36N60C4 , WML36N60F2 , WMK36N60F2 , WMN36N60F2 .

History: WMM040N08HGS

Keywords - WML340N20HG2 MOSFET datasheet

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