WML340N20HG2 PDF and Equivalents Search

 

WML340N20HG2 Specs and Replacement

Type Designator: WML340N20HG2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 59.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 28 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 141 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.034 Ohm

Package: TO220F

WML340N20HG2 substitution

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WML340N20HG2 datasheet

 ..1. Size:540K  way-on
 wml340n20hg2.pdf pdf_icon

WML340N20HG2

WML340N20HG2 200V N-Channel Enhancement Mode Power MOSFET Description WML340N20HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. GDS Features TO-220F V = 200V, I = 28A... See More ⇒

Detailed specifications: WMN30N65EM, WMM30N65EM, WMJ30N65EM, WML30N80M3, WMK30N80M3, WMN30N80M3, WMM30N80M3, WMJ30N80M3, K3569, WML36N60C4, WMK36N60C4, WMN36N60C4, WMM36N60C4, WMJ36N60C4, WML36N60F2, WMK36N60F2, WMN36N60F2

Keywords - WML340N20HG2 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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