All MOSFET. WML50P04TS Datasheet

 

WML50P04TS Datasheet and Replacement


   Type Designator: WML50P04TS
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 36.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 42 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 270 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm
   Package: TO220F
 

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WML50P04TS Datasheet (PDF)

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WML50P04TS

WML50P04TS 40V P-Channel Enhancement Mode Power MOSFET DescriptionWML50P04TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. GDSFeatures TO-220F V = -40V, I = -42A DS DR

Datasheet: WMK36N65F2 , WMN36N65F2 , WMM36N65F2 , WMJ36N65F2 , WML4N100D1 , WML4N90D1 , WMK4N90D1 , WMM4N90D1 , 5N65 , WML53N60C4 , WMK53N60C4 , WMN53N60C4 , WMM53N60C4 , WMJ53N60C4 , WML53N60F2 , WMK53N60F2 , WMN53N60F2 .

History: IPI60R520CP

Keywords - WML50P04TS MOSFET datasheet

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