WML50P04TS Specs and Replacement
Type Designator: WML50P04TS
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 36.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 42 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 270 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm
Package: TO220F
WML50P04TS substitution
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WML50P04TS datasheet
wml50p04ts.pdf
WML50P04TS 40V P-Channel Enhancement Mode Power MOSFET Description WML50P04TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. GDS Features TO-220F V = -40V, I = -42A DS D R ... See More ⇒
Detailed specifications: WMK36N65F2, WMN36N65F2, WMM36N65F2, WMJ36N65F2, WML4N100D1, WML4N90D1, WMK4N90D1, WMM4N90D1, 2SK3568, WML53N60C4, WMK53N60C4, WMN53N60C4, WMM53N60C4, WMJ53N60C4, WML53N60F2, WMK53N60F2, WMN53N60F2
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