All MOSFET. WMM015N08HGS Datasheet

 

WMM015N08HGS MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMM015N08HGS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 347.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 310 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 243.6 nC
   trⓘ - Rise Time: 86.8 nS
   Cossⓘ - Output Capacitance: 2535 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0019 Ohm
   Package: TO263

 WMM015N08HGS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMM015N08HGS Datasheet (PDF)

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 wmm015n08hgs.pdf

WMM015N08HGS WMM015N08HGS

WMM015N08HGS 80V N-Channel Enhancement Mode Power MOSFET DescriptionWMM015N08HGS uses Wayon's advanced power trench MOSFET Dtechnology that has been especially tailored to minimize the on-state Gresistance and yet maintain superior switching performance. This Sdevice is well suited for high efficiency fast switching applications. TO-263Features V = 80V, I = 310A D

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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