WMM015N08HGS MOSFET. Datasheet pdf. Equivalent
Type Designator: WMM015N08HGS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 347.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 310 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 86.8 nS
Cossⓘ - Output Capacitance: 2535 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0019 Ohm
Package: TO263
WMM015N08HGS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMM015N08HGS Datasheet (PDF)
..1. Size:694K way-on
wmm015n08hgs.pdf
wmm015n08hgs.pdf
WMM015N08HGS 80V N-Channel Enhancement Mode Power MOSFET DescriptionWMM015N08HGS uses Wayon's advanced power trench MOSFET Dtechnology that has been especially tailored to minimize the on-state Gresistance and yet maintain superior switching performance. This Sdevice is well suited for high efficiency fast switching applications. TO-263Features V = 80V, I = 310A D
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
