All MOSFET. WMM015N08HGS Datasheet

 

WMM015N08HGS Datasheet and Replacement


   Type Designator: WMM015N08HGS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 347.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 310 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 86.8 nS
   Cossⓘ - Output Capacitance: 2535 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0019 Ohm
   Package: TO263
 

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WMM015N08HGS Datasheet (PDF)

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WMM015N08HGS

WMM015N08HGS 80V N-Channel Enhancement Mode Power MOSFET DescriptionWMM015N08HGS uses Wayon's advanced power trench MOSFET Dtechnology that has been especially tailored to minimize the on-state Gresistance and yet maintain superior switching performance. This Sdevice is well suited for high efficiency fast switching applications. TO-263Features V = 80V, I = 310A D

Datasheet: WMLL020N10HG4 , WMLL020N10HGS , WMLL020NV8HGS , WMLL025N10HGS , WMLL030N12HGS , WMLL040N15HG2 , WMLL065N15HG2 , WMLL099N20HG2 , 5N60 , WMM020N06HG4 , WMM020N10HGS , WMM023N08HGS , WMM028N10HG2 , WMM028N10HGS , WMM030N06HG4 , WMM036N12HGS , WMM037N10HGS .

History: YJS8205A | TK20A60T | STP95N2LH5 | FDD107AN06LA0 | BRI5N65 | KF3N60P | STB12NM60N

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