FDPF680N10T Specs and Replacement
Type Designator: FDPF680N10T
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 24 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.068 Ohm
Package: TO220F
FDPF680N10T substitution
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FDPF680N10T datasheet
fdpf680n10t.pdf
November 2008 FDPF680N10T N-Channel PowerTrench MOSFET 100V, 12A, 68m Features Description RDS(on) = 54m ( Typ.)@ VGS = 10V, ID = 6A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s advanced PowerTrench process that has been espe- Fast Switching Speed cially tailored to minimize the on-state resistance and yet maintain superior switching performanc... See More ⇒
fdpf680n10t.pdf
isc N-Channel MOSFET Transistor FDPF680N10T FEATURES With TO-220F packaging Drain Source Voltage- V 100V DSS Static drain-source on-resistance RDS(on) 68m @V =10V GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =2... See More ⇒
fdp6n60zu fdpf6n60zut.pdf
April 2009 UniFETTM FDP6N60ZU / FDPF6N60ZUT N-Channel MOSFET, FRFET 600V, 4.5A, 2 Features Description RDS(on) = 1.7 ( Typ.) @ VGS = 10V, ID = 2.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( Typ. 14.5nC) stripe, DMOS technology. Low Crss ( Typ. 5pF) This advanced technology... See More ⇒
Detailed specifications: FDPF5N50FT, FDPF5N50NZ, FDPF5N50NZF, FDPF5N50NZU, FDPF5N50T, FDPF5N50UT, FDPF5N60NZ, STF8204, 7N65, STF620S, FDPF6N60ZUT, STF445, FDPF770N15A, FDPF7N60NZ, STF443, FDPF8N50NZ, FDPF8N50NZF
Keywords - FDPF680N10T MOSFET specs
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History: FQD12N20L | ISW65R041CFD | STM4532
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