FDPF680N10T Datasheet and Replacement
Type Designator: FDPF680N10T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 24 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.068 Ohm
Package: TO220F
FDPF680N10T substitution
FDPF680N10T Datasheet (PDF)
fdpf680n10t.pdf

November 2008FDPF680N10TN-Channel PowerTrench MOSFET 100V, 12A, 68mFeatures Description RDS(on) = 54m ( Typ.)@ VGS = 10V, ID = 6A This N-Channel MOSFET is produced using Fairchild Semicon-ductors advanced PowerTrench process that has been espe- Fast Switching Speed cially tailored to minimize the on-state resistance and yet maintain superior switching performanc
fdpf680n10t.pdf

isc N-Channel MOSFET Transistor FDPF680N10TFEATURESWith TO-220F packagingDrain Source Voltage-: V 100VDSSStatic drain-source on-resistance:RDS(on) 68m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =2
fdp6n60zu fdpf6n60zut.pdf

April 2009UniFETTMFDP6N60ZU / FDPF6N60ZUTN-Channel MOSFET, FRFET 600V, 4.5A, 2Features Description RDS(on) = 1.7 ( Typ.) @ VGS = 10V, ID = 2.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 14.5nC)stripe, DMOS technology. Low Crss ( Typ. 5pF)This advanced technology
Datasheet: FDPF5N50FT , FDPF5N50NZ , FDPF5N50NZF , FDPF5N50NZU , FDPF5N50T , FDPF5N50UT , FDPF5N60NZ , STF8204 , STP75NF75 , STF620S , FDPF6N60ZUT , STF445 , FDPF770N15A , FDPF7N60NZ , STF443 , FDPF8N50NZ , FDPF8N50NZF .
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