FDPF680N10T - аналоги, параметры транзистора - Справочник транзисторов

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November 2008 FDPF680N10T N-Channel PowerTrench MOSFET 100V, 12A, 68m Features Description RDS(on) = 54m ( Typ.)@ VGS = 10V, ID = 6A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s advanced PowerTrench process that has been espe- Fast Switching Speed cially tailored to minimize the on-state resistance and yet maintain superior switching performanc

..2. Size:274K inchange semiconductor
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isc N-Channel MOSFET Transistor FDPF680N10T FEATURES With TO-220F packaging Drain Source Voltage- V 100V DSS Static drain-source on-resistance RDS(on) 68m @V =10V GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =2

9.1. Size:525K fairchild semi
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April 2009 UniFETTM FDP6N60ZU / FDPF6N60ZUT N-Channel MOSFET, FRFET 600V, 4.5A, 2 Features Description RDS(on) = 1.7 ( Typ.) @ VGS = 10V, ID = 2.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( Typ. 14.5nC) stripe, DMOS technology. Low Crss ( Typ. 5pF) This advanced technology

Другие MOSFET... FDPF5N50FT , FDPF5N50NZ , FDPF5N50NZF , FDPF5N50NZU , FDPF5N50T , FDPF5N50UT , FDPF5N60NZ , STF8204 , 7N65 , STF620S , FDPF6N60ZUT , STF445 , FDPF770N15A , FDPF7N60NZ , STF443 , FDPF8N50NZ , FDPF8N50NZF .