FDPF6N60ZUT Datasheet. Specs and Replacement

Type Designator: FDPF6N60ZUT  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 33.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm

Package: TO220F

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FDPF6N60ZUT datasheet

 ..1. Size:525K  fairchild semi
 fdp6n60zu fdpf6n60zut.pdf pdf_icon

FDPF6N60ZUT

April 2009 UniFETTM FDP6N60ZU / FDPF6N60ZUT N-Channel MOSFET, FRFET 600V, 4.5A, 2 Features Description RDS(on) = 1.7 ( Typ.) @ VGS = 10V, ID = 2.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( Typ. 14.5nC) stripe, DMOS technology. Low Crss ( Typ. 5pF) This advanced technology... See More ⇒

 9.1. Size:691K  fairchild semi
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FDPF6N60ZUT

November 2008 FDPF680N10T N-Channel PowerTrench MOSFET 100V, 12A, 68m Features Description RDS(on) = 54m ( Typ.)@ VGS = 10V, ID = 6A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s advanced PowerTrench process that has been espe- Fast Switching Speed cially tailored to minimize the on-state resistance and yet maintain superior switching performanc... See More ⇒

 9.2. Size:274K  inchange semiconductor
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FDPF6N60ZUT

isc N-Channel MOSFET Transistor FDPF680N10T FEATURES With TO-220F packaging Drain Source Voltage- V 100V DSS Static drain-source on-resistance RDS(on) 68m @V =10V GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =2... See More ⇒

Detailed specifications: FDPF5N50NZF, FDPF5N50NZU, FDPF5N50T, FDPF5N50UT, FDPF5N60NZ, STF8204, FDPF680N10T, STF620S, IRFP250N, STF445, FDPF770N15A, FDPF7N60NZ, STF443, FDPF8N50NZ, FDPF8N50NZF, FDPF8N50NZU, FDPF8N60ZUT

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