All MOSFET. WMM190N03TS Datasheet

 

WMM190N03TS Datasheet and Replacement


   Type Designator: WMM190N03TS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 192 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 190 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 672 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm
   Package: TO263
 

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WMM190N03TS Datasheet (PDF)

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WMM190N03TS

WMM190N03TS 30V N-Channel Enhancement Mode Power MOSFET DescriptionWMM190N03TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain Dsuperior switching performance.GSFeatures TO-263 V = 30V, I = 190A DS DR

Datasheet: WMM13N50C4 , WML13N50C4 , WMO13N50C4 , WMN13N50C4 , WMP13N50C4 , WMK13N50C4 , WMM161N15T2 , WMM180N03TS , IRFB4227 , WMM220N20HG3 , WMM240P10HG4 , WMM340N20HG2 , WMM50P04T1 , WMM80N08TS , WMM80P04TS , WMM80R1K0S , WMN80R1K0S .

History: SI2308A | WMK11N65SR | STD25NF10 | WSF50N10G | LSD70R450GT | SI3134K | RU60E16L

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