WMM190N03TS PDF and Equivalents Search

 

WMM190N03TS Specs and Replacement

Type Designator: WMM190N03TS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 192 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 190 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 27 nS

Cossⓘ - Output Capacitance: 672 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm

Package: TO263

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WMM190N03TS datasheet

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WMM190N03TS

WMM190N03TS 30V N-Channel Enhancement Mode Power MOSFET Description WMM190N03TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain D superior switching performance. G S Features TO-263 V = 30V, I = 190A DS D R ... See More ⇒

Detailed specifications: WMM13N50C4, WML13N50C4, WMO13N50C4, WMN13N50C4, WMP13N50C4, WMK13N50C4, WMM161N15T2, WMM180N03TS, AO3400, WMM220N20HG3, WMM240P10HG4, WMM340N20HG2, WMM50P04T1, WMM80N08TS, WMM80P04TS, WMM80R1K0S, WMN80R1K0S

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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