All MOSFET. WMM190N03TS Datasheet

 

WMM190N03TS MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMM190N03TS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 192 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 190 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 100 nC
   trⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 672 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm
   Package: TO263

 WMM190N03TS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMM190N03TS Datasheet (PDF)

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 wmm190n03ts.pdf

WMM190N03TS WMM190N03TS

WMM190N03TS 30V N-Channel Enhancement Mode Power MOSFET DescriptionWMM190N03TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain Dsuperior switching performance.GSFeatures TO-263 V = 30V, I = 190A DS DR

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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