All MOSFET. WMM220N20HG3 Datasheet

 

WMM220N20HG3 Datasheet and Replacement


   Type Designator: WMM220N20HG3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 312.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 78 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 210 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: TO263
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WMM220N20HG3 Datasheet (PDF)

 ..1. Size:499K  way-on
 wmm220n20hg3.pdf pdf_icon

WMM220N20HG3

WMM220N20HG3 200V N-Channel Enhancement Mode Power MOSFET DescriptionWMM220N20HG3 uses Wayon's 3nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This device Gis well suited for high efficiency fast s witching applications. S.TO-263Features V = 200V,

 9.1. Size:671K  way-on
 wmn22n50c4 wmm22n50c4 wmj22n50c4 wmo22n50c4 wmk22n50c4 wml22n50c4.pdf pdf_icon

WMM220N20HG3

WMN22N50C4, WMM22N MJ22N50CN50C4, WM C4 WMO22N50C4, WMK22N ML22N50CN50C4, WM C4 500V n Power MOSFETV 0.22 Super JunctionDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM C4

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IPB22N03S4L-15 | LSC65R280HT | 2SK3700

Keywords - WMM220N20HG3 MOSFET datasheet

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