All MOSFET. WMM220N20HG3 Datasheet

 

WMM220N20HG3 Datasheet and Replacement


   Type Designator: WMM220N20HG3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 312.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 78 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 210 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: TO263
 

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WMM220N20HG3 Datasheet (PDF)

 ..1. Size:499K  way-on
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WMM220N20HG3

WMM220N20HG3 200V N-Channel Enhancement Mode Power MOSFET DescriptionWMM220N20HG3 uses Wayon's 3nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This device Gis well suited for high efficiency fast s witching applications. S.TO-263Features V = 200V,

 9.1. Size:671K  way-on
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WMM220N20HG3

WMN22N50C4, WMM22N MJ22N50CN50C4, WM C4 WMO22N50C4, WMK22N ML22N50CN50C4, WM C4 500V n Power MOSFETV 0.22 Super JunctionDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM C4

Datasheet: WML13N50C4 , WMO13N50C4 , WMN13N50C4 , WMP13N50C4 , WMK13N50C4 , WMM161N15T2 , WMM180N03TS , WMM190N03TS , IRFB4227 , WMM240P10HG4 , WMM340N20HG2 , WMM50P04T1 , WMM80N08TS , WMM80P04TS , WMM80R1K0S , WMN80R1K0S , WMK80R1K0S .

History: WMM040N08HGS

Keywords - WMM220N20HG3 MOSFET datasheet

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