WMM220N20HG3 200V N-Channel Enhancement Mode Power MOSFET DescriptionWMM220N20HG3 uses Wayon's 3nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This device Gis well suited for high efficiency fast s witching applications. S.TO-263Features V = 200V,

WMN22N50C4, WMM22N MJ22N50CN50C4, WM C4 WMO22N50C4, WMK22N ML22N50CN50C4, WM C4 500V n Power MOSFETV 0.22 Super JunctionDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM C4