All MOSFET. WMM240P10HG4 Datasheet

 

WMM240P10HG4 Datasheet and Replacement


   Type Designator: WMM240P10HG4
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 192.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 320 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
   Package: TO263
 

 WMM240P10HG4 substitution

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WMM240P10HG4 Datasheet (PDF)

 ..1. Size:681K  way-on
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WMM240P10HG4

WMM240P10HG4 100V P-Channel Enhancement Mode Power MOSFET DescriptionWMM240P10HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This GSdevice is well suited for high efficiency fast switching applications. TO-263Features V = -100V, I =

Datasheet: WMO13N50C4 , WMN13N50C4 , WMP13N50C4 , WMK13N50C4 , WMM161N15T2 , WMM180N03TS , WMM190N03TS , WMM220N20HG3 , P55NF06 , WMM340N20HG2 , WMM50P04T1 , WMM80N08TS , WMM80P04TS , WMM80R1K0S , WMN80R1K0S , WMK80R1K0S , WML80R1K0S .

History: PDN2313S

Keywords - WMM240P10HG4 MOSFET datasheet

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