All MOSFET. WMM240P10HG4 Datasheet

 

WMM240P10HG4 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMM240P10HG4
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 192.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.4 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 64.6 nC
   trⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 320 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
   Package: TO263

 WMM240P10HG4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMM240P10HG4 Datasheet (PDF)

 ..1. Size:681K  way-on
 wmm240p10hg4.pdf

WMM240P10HG4 WMM240P10HG4

WMM240P10HG4 100V P-Channel Enhancement Mode Power MOSFET DescriptionWMM240P10HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This GSdevice is well suited for high efficiency fast switching applications. TO-263Features V = -100V, I =

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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