WMM240P10HG4 PDF and Equivalents Search

 

WMM240P10HG4 Specs and Replacement

Type Designator: WMM240P10HG4

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 192.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 320 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm

Package: TO263

WMM240P10HG4 substitution

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WMM240P10HG4 datasheet

 ..1. Size:681K  way-on
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WMM240P10HG4

WMM240P10HG4 100V P-Channel Enhancement Mode Power MOSFET Description WMM240P10HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state D resistance and yet maintain superior switching performance. This G S device is well suited for high efficiency fast switching applications. TO-263 Features V = -100V, I =... See More ⇒

Detailed specifications: WMO13N50C4, WMN13N50C4, WMP13N50C4, WMK13N50C4, WMM161N15T2, WMM180N03TS, WMM190N03TS, WMM220N20HG3, IRF3710, WMM340N20HG2, WMM50P04T1, WMM80N08TS, WMM80P04TS, WMM80R1K0S, WMN80R1K0S, WMK80R1K0S, WML80R1K0S

Keywords - WMM240P10HG4 MOSFET specs

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