WMM340N20HG2 PDF and Equivalents Search

 

WMM340N20HG2 Specs and Replacement

Type Designator: WMM340N20HG2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 173.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 141 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.034 Ohm

Package: TO263

WMM340N20HG2 substitution

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WMM340N20HG2 datasheet

 ..1. Size:521K  way-on
 wmm340n20hg2.pdf pdf_icon

WMM340N20HG2

WMM340N20HG2 200V N-Channel Enhancement Mode Power MOSFET Description WMM340N20HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state D resistance and yet maintain superior switching performance. This device G is well suited for high efficiency fast switching applications. S TO-263 Features V = 200V, I = 50... See More ⇒

Detailed specifications: WMN13N50C4, WMP13N50C4, WMK13N50C4, WMM161N15T2, WMM180N03TS, WMM190N03TS, WMM220N20HG3, WMM240P10HG4, 10N60, WMM50P04T1, WMM80N08TS, WMM80P04TS, WMM80R1K0S, WMN80R1K0S, WMK80R1K0S, WML80R1K0S, WMP80R1K0S

Keywords - WMM340N20HG2 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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