WMM340N20HG2 MOSFET. Datasheet pdf. Equivalent
Type Designator: WMM340N20HG2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 173.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 50 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 23 nC
trⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 141 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.034 Ohm
Package: TO263
WMM340N20HG2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMM340N20HG2 Datasheet (PDF)
..1. Size:521K way-on
wmm340n20hg2.pdf
wmm340n20hg2.pdf
WMM340N20HG2 200V N-Channel Enhancement Mode Power MOSFET DescriptionWMM340N20HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This device Gis well suited for high efficiency fast switching applications. STO-263Features V = 200V, I = 50
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