All MOSFET. WMM340N20HG2 Datasheet

 

WMM340N20HG2 Datasheet and Replacement


   Type Designator: WMM340N20HG2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 173.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 141 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.034 Ohm
   Package: TO263
 

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WMM340N20HG2 Datasheet (PDF)

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WMM340N20HG2

WMM340N20HG2 200V N-Channel Enhancement Mode Power MOSFET DescriptionWMM340N20HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This device Gis well suited for high efficiency fast switching applications. STO-263Features V = 200V, I = 50

Datasheet: WMN13N50C4 , WMP13N50C4 , WMK13N50C4 , WMM161N15T2 , WMM180N03TS , WMM190N03TS , WMM220N20HG3 , WMM240P10HG4 , IRFB4227 , WMM50P04T1 , WMM80N08TS , WMM80P04TS , WMM80R1K0S , WMN80R1K0S , WMK80R1K0S , WML80R1K0S , WMP80R1K0S .

History: FHF2N65D | J176

Keywords - WMM340N20HG2 MOSFET datasheet

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