All MOSFET. WMM50P04T1 Datasheet

 

WMM50P04T1 Datasheet and Replacement


   Type Designator: WMM50P04T1
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 65.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 55 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 31 nS
   Cossⓘ - Output Capacitance: 270 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: TO263
 

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WMM50P04T1 Datasheet (PDF)

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WMM50P04T1

WMM50P04T1 40V P-Channel Enhancement Mode Power MOSFET DescriptionWMM50P04T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain Dsuperior switching performance. GSFeatures TO-263 V = -40V, I = -55A DS DR

Datasheet: WMP13N50C4 , WMK13N50C4 , WMM161N15T2 , WMM180N03TS , WMM190N03TS , WMM220N20HG3 , WMM240P10HG4 , WMM340N20HG2 , IRFB4110 , WMM80N08TS , WMM80P04TS , WMM80R1K0S , WMN80R1K0S , WMK80R1K0S , WML80R1K0S , WMP80R1K0S , WMO80R1K0S .

History: IRF7351

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