WMM50P04T1 PDF and Equivalents Search

 

WMM50P04T1 Specs and Replacement

Type Designator: WMM50P04T1

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 65.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 55 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 31 nS

Cossⓘ - Output Capacitance: 270 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm

Package: TO263

WMM50P04T1 substitution

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WMM50P04T1 datasheet

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WMM50P04T1

WMM50P04T1 40V P-Channel Enhancement Mode Power MOSFET Description WMM50P04T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain D superior switching performance. G S Features TO-263 V = -40V, I = -55A DS D R ... See More ⇒

Detailed specifications: WMP13N50C4, WMK13N50C4, WMM161N15T2, WMM180N03TS, WMM190N03TS, WMM220N20HG3, WMM240P10HG4, WMM340N20HG2, AON6414A, WMM80N08TS, WMM80P04TS, WMM80R1K0S, WMN80R1K0S, WMK80R1K0S, WML80R1K0S, WMP80R1K0S, WMO80R1K0S

Keywords - WMM50P04T1 MOSFET specs

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