WMJ22N50C4 Specs and Replacement

Type Designator: WMJ22N50C4

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 86 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 28 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm

Package: TO247

WMJ22N50C4 substitution

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WMJ22N50C4 datasheet

 ..1. Size:671K  way-on
 wmn22n50c4 wmm22n50c4 wmj22n50c4 wmo22n50c4 wmk22n50c4 wml22n50c4.pdf pdf_icon

WMJ22N50C4

WMN22N50C4, WMM22N MJ22N50C N50C4, WM C4 WMO22N50C4, WMK22N ML22N50C N50C4, WM C4 500V n Power MOSFET V 0.22 Super Junction Descrip ption WMOSTM C4 is Wa 4th generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G and low ga charge performanc WMOSTM C4... See More ⇒

 9.1. Size:601K  way-on
 wmj220n20hg3.pdf pdf_icon

WMJ22N50C4

WMJ220N20HG3 200V N-Channel Enhancement Mode Power MOSFET Description WMJ220N20HG3 uses Wayon's 3rd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This S device is well suited for high efficiency fast switching applications. D G . TO-247 Features V = 200V, I... See More ⇒

Detailed specifications: WMK90R1K5S, WML90R1K5S, WMP90R1K5S, WMO90R1K5S, WMM95P06TS, WMMB020N10HG4, WMN22N50C4, WMM22N50C4, NCEP15T14, WMO22N50C4, WMK22N50C4, WML22N50C4, WMO030N06HG4, WMO030N06LG4, WMO048NV6HG4, WMO048NV6LG4, WMO053NV8HGS

Keywords - WMJ22N50C4 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.