All MOSFET. WMJ22N50C4 Datasheet

 

WMJ22N50C4 Datasheet and Replacement


   Type Designator: WMJ22N50C4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 86 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 28 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm
   Package: TO247
 

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WMJ22N50C4 Datasheet (PDF)

 ..1. Size:671K  way-on
 wmn22n50c4 wmm22n50c4 wmj22n50c4 wmo22n50c4 wmk22n50c4 wml22n50c4.pdf pdf_icon

WMJ22N50C4

WMN22N50C4, WMM22N MJ22N50CN50C4, WM C4 WMO22N50C4, WMK22N ML22N50CN50C4, WM C4 500V n Power MOSFETV 0.22 Super JunctionDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM C4

 9.1. Size:601K  way-on
 wmj220n20hg3.pdf pdf_icon

WMJ22N50C4

WMJ220N20HG3 200V N-Channel Enhancement Mode Power MOSFET DescriptionWMJ220N20HG3 uses Wayon's 3rd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This Sdevice is well suited for high efficiency fast switching applications. DG.TO-247Features V = 200V, I

Datasheet: WMK90R1K5S , WML90R1K5S , WMP90R1K5S , WMO90R1K5S , WMM95P06TS , WMMB020N10HG4 , WMN22N50C4 , WMM22N50C4 , IRFP450 , WMO22N50C4 , WMK22N50C4 , WML22N50C4 , WMO030N06HG4 , WMO030N06LG4 , WMO048NV6HG4 , WMO048NV6LG4 , WMO053NV8HGS .

History: IRF7351

Keywords - WMJ22N50C4 MOSFET datasheet

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