WMO048NV6HG4 MOSFET. Datasheet pdf. Equivalent
Type Designator: WMO048NV6HG4
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 71.4 W
Maximum Drain-Source Voltage |Vds|: 65 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V
Maximum Drain Current |Id|: 90 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 28.5 nC
Rise Time (tr): 8.2 nS
Drain-Source Capacitance (Cd): 773 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0052 Ohm
Package: TO252
WMO048NV6HG4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMO048NV6HG4 Datasheet (PDF)
wmo048nv6hg4.pdf
WMO048NV6HG4 65V N-Channel Enhancement Mode Power MOSFET DescriptionWMO048NV6HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the Don-state resistance and yet maintain superior switching performance. SThis device is well suited for high efficiency fast switching applications. GTO-252Features V = 65V, I = 90
wmo048nv6lg4.pdf
WMO048NV6LG4 65V N-Channel Enhancement Mode Power MOSFET DescriptionWMO048NV6LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the Don-state resistance and yet maintain superior switching performance. SThis device is well suited for high efficiency fast switching applications. GTO-252Features V = 65V, I = 90
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 13N50 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
