All MOSFET. WMO048NV6HG4 Datasheet

 

WMO048NV6HG4 Datasheet and Replacement


   Type Designator: WMO048NV6HG4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 71.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 90 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 8.2 nS
   Cossⓘ - Output Capacitance: 773 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0052 Ohm
   Package: TO252
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WMO048NV6HG4 Datasheet (PDF)

 ..1. Size:659K  way-on
 wmo048nv6hg4.pdf pdf_icon

WMO048NV6HG4

WMO048NV6HG4 65V N-Channel Enhancement Mode Power MOSFET DescriptionWMO048NV6HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the Don-state resistance and yet maintain superior switching performance. SThis device is well suited for high efficiency fast switching applications. GTO-252Features V = 65V, I = 90

 5.1. Size:658K  way-on
 wmo048nv6lg4.pdf pdf_icon

WMO048NV6HG4

WMO048NV6LG4 65V N-Channel Enhancement Mode Power MOSFET DescriptionWMO048NV6LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the Don-state resistance and yet maintain superior switching performance. SThis device is well suited for high efficiency fast switching applications. GTO-252Features V = 65V, I = 90

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: MCH3484 | DMN30H4D0L

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