WMO060N10HGS Specs and Replacement

Type Designator: WMO060N10HGS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 138.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 105 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 655 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: TO252

WMO060N10HGS substitution

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WMO060N10HGS datasheet

 ..1. Size:630K  way-on
 wmo060n10hgs.pdf pdf_icon

WMO060N10HGS

WMO060N10HGS 100V N-Channel Enhancement Mode Power MOSFET Description WMO060N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state D resistance and yet maintain superior switching performance. This S device is well suited for high efficiency fast switching applications. G TO-252 Features V = 100V, I = 105A ... See More ⇒

 9.1. Size:673K  way-on
 wml06n80m3 wmn06n80m3 wmm06n80m3 wmo06n80m3 wmp06n80m3 wmk06n80m3.pdf pdf_icon

WMO060N10HGS

WML06N80M3, W 80M3, WM M3 WMN06N8 MM06N80M WMO0 80M3, WM M3 06N80M3, WMP06N8 MK06N80M 800 Junction ET 0V 1.8 Super J n Power MOSFE Descrip ption WMOSTM M3 is Wayo neration 800 M on s 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D G G G T and low ga charge perf... See More ⇒

Detailed specifications: WMO22N50C4, WMK22N50C4, WML22N50C4, WMO030N06HG4, WMO030N06LG4, WMO048NV6HG4, WMO048NV6LG4, WMO053NV8HGS, IRF1407, WMO080N10HG2, WMO090NV6HG4, WMO099N10HGS, WMO099N10LGS, WMO09N15TS, WMO09N20DM, WMO09N20DMH, WMO09P10TS

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