WMO2N100D1 Specs and Replacement
Type Designator: WMO2N100D1
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 70 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 8.5 Ohm
Package: TO252
WMO2N100D1 substitution
- MOSFET ⓘ Cross-Reference Search
WMO2N100D1 datasheet
wmo2n100d1 wmaa2n100d1.pdf
WMO2N100D1 WMAA2N100D1 1000V 2A 6.3 N-ch Power MOSFET Description TO-252 TO-251-L9.4 WMOSTM D1 is Wayon s 1st generation VDMOS TAB TAB family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. D G S G Features D S V =1050V... See More ⇒
Detailed specifications: WMO20P15TS, WMO240N10LG2, WMO25N06TS, WMO25N10T1, WMO25P03TS, WMO25P04TS, WMO25P06T1, WMO28N15T2, IRFZ44N, WMAA2N100D1, WMO30P03TS, WMO30P10TS, WMO35N06T1, WMO35P04T1, WMO35P06TS, WMO40N04TS, WMO50P03T1
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
