All MOSFET. WMO30P03TS Datasheet

 

WMO30P03TS Datasheet and Replacement


   Type Designator: WMO30P03TS
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 24 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 190 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0155 Ohm
   Package: TO252
 

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WMO30P03TS Datasheet (PDF)

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WMO30P03TS

WMO30P03TS 30V P-Channel Enhancement Mode Power MOSFET DescriptionWMO30P03TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DFeatures S V = -30V, I = -30A GDS DTO-252R

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WMO30P03TS

WMO30P10TS 100V P-Channel Enhancement Mode Power MOSFET DescriptionWMO30P10TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DSFeatures GTO-252 V = -100V, I = -35A DS DR

Datasheet: WMO25N06TS , WMO25N10T1 , WMO25P03TS , WMO25P04TS , WMO25P06T1 , WMO28N15T2 , WMO2N100D1 , WMAA2N100D1 , IRF740 , WMO30P10TS , WMO35N06T1 , WMO35P04T1 , WMO35P06TS , WMO40N04TS , WMO50P03T1 , WMO50P04T1 , WMO55N03T1 .

History: R6076ENZ1 | AOTF298L | 2SK3989-01MR | AOT7S60L | L2N7002KN3T5G | SPB100N06S2L-05 | AOTF18N65L

Keywords - WMO30P03TS MOSFET datasheet

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