WMO30P03TS Specs and Replacement

Type Designator: WMO30P03TS

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 24 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 190 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0155 Ohm

Package: TO252

WMO30P03TS substitution

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WMO30P03TS datasheet

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WMO30P03TS

WMO30P03TS 30V P-Channel Enhancement Mode Power MOSFET Description WMO30P03TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. D Features S V = -30V, I = -30A G DS D TO-252 R ... See More ⇒

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WMO30P03TS

WMO30P10TS 100V P-Channel Enhancement Mode Power MOSFET Description WMO30P10TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. D S Features G TO-252 V = -100V, I = -35A DS D R ... See More ⇒

Detailed specifications: WMO25N06TS, WMO25N10T1, WMO25P03TS, WMO25P04TS, WMO25P06T1, WMO28N15T2, WMO2N100D1, WMAA2N100D1, IRF740, WMO30P10TS, WMO35N06T1, WMO35P04T1, WMO35P06TS, WMO40N04TS, WMO50P03T1, WMO50P04T1, WMO55N03T1

Keywords - WMO30P03TS MOSFET specs

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