All MOSFET. WMO40N04TS Datasheet

 

 

WMO40N04TS Datasheet and Replacement


   Type Designator: WMO40N04TS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 2.1 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0125 Ohm
   Package: TO252
 

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WMO40N04TS Datasheet (PDF)

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WMO40N04TS

WMO40N04TS 40V N-Channel Enhancement Mode Power MOSFET DescriptionWMO40N04TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain Dsuperior switching performance. SGFeatures TO-252 V = 40V, I = 40A DS DR

Datasheet: WMO28N15T2 , WMO2N100D1 , WMAA2N100D1 , WMO30P03TS , WMO30P10TS , WMO35N06T1 , WMO35P04T1 , WMO35P06TS , 50N06 , WMO50P03T1 , WMO50P04T1 , WMO55N03T1 , WMO5N50D1B , WMO60N02T1 , WMO60N04T1 , WMO60P02TS , WMO60P03TS .

History: ME7170-G

Keywords - WMO40N04TS MOSFET datasheet

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