WMO40N04TS Specs and Replacement

Type Designator: WMO40N04TS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 33 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.1 nS

Cossⓘ - Output Capacitance: 110 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0125 Ohm

Package: TO252

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WMO40N04TS datasheet

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WMO40N04TS

WMO40N04TS 40V N-Channel Enhancement Mode Power MOSFET Description WMO40N04TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain D superior switching performance. S G Features TO-252 V = 40V, I = 40A DS D R ... See More ⇒

Detailed specifications: WMO28N15T2, WMO2N100D1, WMAA2N100D1, WMO30P03TS, WMO30P10TS, WMO35N06T1, WMO35P04T1, WMO35P06TS, 50N06, WMO50P03T1, WMO50P04T1, WMO55N03T1, WMO5N50D1B, WMO60N02T1, WMO60N04T1, WMO60P02TS, WMO60P03TS

Keywords - WMO40N04TS MOSFET specs

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