All MOSFET. WMO50P04T1 Datasheet

 

WMO50P04T1 Datasheet and Replacement


   Type Designator: WMO50P04T1
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 55 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 31 nS
   Cossⓘ - Output Capacitance: 282 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: TO252
 

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WMO50P04T1 Datasheet (PDF)

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WMO50P04T1

WMO50P04T1 40V P-Channel Enhancement Mode Power MOSFET DescriptionWMO50P04T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DFeatures SG V = -40V, I = -50A DS DTO-252R

 7.1. Size:611K  way-on
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WMO50P04T1

WMO50P03T1 30V P-Channel Enhancement Mode Power MOSFET DescriptionWMO50P03T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DSFeatures GTO-252 V = -30V, I = -50A DS DR

Datasheet: WMAA2N100D1 , WMO30P03TS , WMO30P10TS , WMO35N06T1 , WMO35P04T1 , WMO35P06TS , WMO40N04TS , WMO50P03T1 , IRFZ44 , WMO55N03T1 , WMO5N50D1B , WMO60N02T1 , WMO60N04T1 , WMO60P02TS , WMO60P03TS , WMO690N15HG2 , WMO6N80D1 .

History: IPP100N10S3-05 | NCEP02T10D | RU5H8P | WSF40P06 | 2SK636 | IPP075N15N3G | R6530KNX1

Keywords - WMO50P04T1 MOSFET datasheet

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