WMO50P04T1 Specs and Replacement
Type Designator: WMO50P04T1
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 55 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 31 nS
Cossⓘ - Output Capacitance: 282 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
Package: TO252
WMO50P04T1 substitution
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WMO50P04T1 datasheet
wmo50p04t1.pdf
WMO50P04T1 40V P-Channel Enhancement Mode Power MOSFET Description WMO50P04T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. D Features S G V = -40V, I = -50A DS D TO-252 R ... See More ⇒
wmo50p03t1.pdf
WMO50P03T1 30V P-Channel Enhancement Mode Power MOSFET Description WMO50P03T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. D S Features G TO-252 V = -30V, I = -50A DS D R ... See More ⇒
Detailed specifications: WMAA2N100D1, WMO30P03TS, WMO30P10TS, WMO35N06T1, WMO35P04T1, WMO35P06TS, WMO40N04TS, WMO50P03T1, IRFZ44, WMO55N03T1, WMO5N50D1B, WMO60N02T1, WMO60N04T1, WMO60P02TS, WMO60P03TS, WMO690N15HG2, WMO6N80D1
Keywords - WMO50P04T1 MOSFET specs
WMO50P04T1 cross reference
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WMO50P04T1 substitution
WMO50P04T1 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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