All MOSFET. WMO50P04T1 Datasheet

 

WMO50P04T1 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMO50P04T1
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 55 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 28 nC
   trⓘ - Rise Time: 31 nS
   Cossⓘ - Output Capacitance: 282 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: TO252

 WMO50P04T1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMO50P04T1 Datasheet (PDF)

 ..1. Size:612K  way-on
 wmo50p04t1.pdf

WMO50P04T1 WMO50P04T1

WMO50P04T1 40V P-Channel Enhancement Mode Power MOSFET DescriptionWMO50P04T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DFeatures SG V = -40V, I = -50A DS DTO-252R

 7.1. Size:611K  way-on
 wmo50p03t1.pdf

WMO50P04T1 WMO50P04T1

WMO50P03T1 30V P-Channel Enhancement Mode Power MOSFET DescriptionWMO50P03T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DSFeatures GTO-252 V = -30V, I = -50A DS DR

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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